Datasheet > M366S1623ET0

M366S1623ET0

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
三星 - SAMSUNG		光电二极管动态存储器
页数	文件大小	规格书
12页	173K
描述
16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

M366S1623ET0 数据手册

M366S1623ET0

PC133 Unbuffered DIMM

ABSOLUTE MAXIMUM RATINGS

Parameter

Voltage on any pin relative to Vss

Voltage on VDD supply relative to Vss

Storage temperature

Symbol

VIN, VOUT

VDD, VDDQ

TSTG

Value

-1.0 ~ 4.6

-55 ~ +150

Unit

°C

Power dissipation

Short circuit current

IOS

Note :

Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITIONS AND CHARACTERISTICS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)

Parameter

Supply voltage

Symbol

VDD, VDDQ

VIH

Min

3.0

2.0

-0.3

2.4

Typ

Max

Unit

Note

3.3

3.6

Input logic high voltage

Input logic low voltage

Output logic high voltage

Output logic low voltage

Input leakage current

3.0

VDDQ+0.3

VIL

0.8

VOH

IOH = -2mA

IOL = 2mA

VOL

0.4

ILI

-10

Note :

1. VIH (max) = 5.6V AC. The overshoot voltage duration is £ 3ns.

2. VIL (min) = -2.0V AC. The undershoot voltage duration is £ 3ns.

3. Any input 0V £ VIN £ VDDQ.

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.

CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200 mV)

Symbol

Min

Max

Unit

Address (A0 ~ A11, BA0 ~ BA1)

RAS, CAS, WE

CADD

CIN

CKE (CKE0 ~ CKE1)

Clock (CLK0 ~ CLK3)

CS (CS0, CS2)

CCKE

CCLK

CCS

DQM (DQM0 ~ DQM7)

DQ (DQ0 ~ DQ63)

CDQM

COUT

REV. 0.0 Dec, 2000

1 2 3 456 7 8...12

下载PDF

与M366S1623ET0相关器件

型号	品牌	描述	获取价格	数据表
M366S1623ET0-C75	SAMSUNG	Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-168	获取价格
M366S1623ETS-C1H	SAMSUNG	Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-168	获取价格
M366S1623ETS-C1L	SAMSUNG	Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-168	获取价格
M366S1623ETS-C75	SAMSUNG	Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168	获取价格
M366S1623ETS-C7A	SAMSUNG	Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168	获取价格
M366S1654BTS-C75	SAMSUNG	Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168	获取价格