Datasheet > M29W800DB

M29W800DB

更新时间： 2024-09-29 22:37:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
41页	220K
描述
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

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数据手册

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M29W800DB 数据手册

M29W800DT

M29W800DB

8 Mbit (1Mb x8 or 512Kb x16, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

■ SUPPLY VOLTAGE

Figure 1. Packages

– V = 2.7V to 3.6V for Program, Erase and

Read

■ ACCESS TIME: 70, 90ns

■ PROGRAMMING TIME

– 10µs per Byte/Word typical

■ 19 MEMORY BLOCKS

SO44 (M)

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 16 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte/Word Program algorithms

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

TSOP48 (N)

12 x 20mm

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

FBGA

■ TEMPORARY BLOCK UNPROTECTION

MODE

■ COMMON FLASH INTERFACE

– 64 bit Security Code

TFBGA48 (ZA)

8 x 6 ball array

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W800DT: 22D7h

– Bottom Device Code M29W800DB: 225Bh

April 2002

1/41

12 3 4 5 6 7...41

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