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M29W400T-150M5 PDF预览

M29W400T-150M5

更新时间： 2024-02-24 08:13:38
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意法半导体 - STMICROELECTRONICS 闪存
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M29W400T-150M5 数据手册

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M29W400T  
M29W400B  
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)  
Low Voltage Single Supply Flash Memory  
NOT FOR NEW DESIGN  
M29W400T and M29W400Bare replaced  
respectivelyby the M29W400BT and  
M29W400BB  
2.7V to 3.6V SUPPLY VOLTAGE for  
44  
PROGRAM, ERASE and READ OPERATIONS  
FAST ACCESS TIME: 90ns  
FAST PROGRAMMING TIME  
1
TSOP48 (N)  
12 x 20 mm  
SO44 (M)  
– 10µs by Byte / 16µs by Word typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Byte-by-Byte or Word-by-Word  
– Status Register bits and Ready/BusyOutput  
MEMORY BLOCKS  
BGA  
– Boot Block (Top or Bottom location)  
– Parameter and Main blocks  
BLOCK, MULTI-BLOCK and CHIP ERASE  
FBGA48 (ZA)  
8 x 6 solder balls  
MULTI BLOCK PROTECTION/TEMPORARY  
UNPROTECTION MODES  
ERASE SUSPEND and RESUME MODES  
– Read and Programanother Block during  
Erase Suspend  
Figure 1. Logic Diagram  
LOW POWER CONSUMPTION  
– Stand-by and AutomaticStand-by  
100,000PROGRAM/ERASE CYCLES per  
BLOCK  
V
CC  
20 YEARS DATA RETENTION  
– Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Device Code, M29W400T: 00EEh  
– Device Code, M29W400B: 00EFh  
18  
15  
A0-A17  
DQ0-DQ14  
W
E
DQ15A–1  
BYTE  
RB  
M29W400T  
M29W400B  
DESCRIPTION  
G
The M29W400 is a non-volatile memory that may  
be erasedelectrically at theblock or chip level and  
programmedin-systemon a Byte-by-ByteorWord-  
by-Wordbasisusing onlya single2.7Vto 3.6VVCC  
supply. For Program and Erase operations the  
necessary high voltages are generated internally.  
The device can also be programmed in standard  
programmers.  
RP  
V
SS  
AI02065  
The array matrix organisationallows each block to  
be erased and reprogrammed without affecting  
other blocks. Blocks can be protected againstpro-  
graming and erase on programming equipment,  
November 1999  
1/34  
This is informationon a product still in productionbut not recommendedfor new designs.  
1234567...34

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M29W400T-150N1RTR STMICROELECTRONICS

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M29W400T-150N1TR STMICROELECTRONICS

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 		4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory
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