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M29W400T-150N1R PDF预览

M29W400T-150N1R

更新时间: 2024-01-29 21:40:45
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
34页 246K
描述
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory

M29W400T-150N1R 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:12 X 20 MM, PLASTIC, TSOP-48
针数:48Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.71Is Samacsys:N
最长访问时间:150 ns其他特性:TOP BOOT BLOCK
备用内存宽度:8启动块:TOP
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G48
JESD-609代码:e0长度:18.4 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,7端子数量:48
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:16K,8K,32K,64K
最大待机电流:0.00005 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M29W400T-150N1R 数据手册

 浏览型号M29W400T-150N1R的Datasheet PDF文件第2页浏览型号M29W400T-150N1R的Datasheet PDF文件第3页浏览型号M29W400T-150N1R的Datasheet PDF文件第4页浏览型号M29W400T-150N1R的Datasheet PDF文件第5页浏览型号M29W400T-150N1R的Datasheet PDF文件第6页浏览型号M29W400T-150N1R的Datasheet PDF文件第7页 
M29W400T  
M29W400B  
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)  
Low Voltage Single Supply Flash Memory  
NOT FOR NEW DESIGN  
M29W400T and M29W400Bare replaced  
respectivelyby the M29W400BT and  
M29W400BB  
2.7V to 3.6V SUPPLY VOLTAGE for  
44  
PROGRAM, ERASE and READ OPERATIONS  
FAST ACCESS TIME: 90ns  
FAST PROGRAMMING TIME  
1
TSOP48 (N)  
12 x 20 mm  
SO44 (M)  
– 10µs by Byte / 16µs by Word typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Byte-by-Byte or Word-by-Word  
– Status Register bits and Ready/BusyOutput  
MEMORY BLOCKS  
BGA  
– Boot Block (Top or Bottom location)  
– Parameter and Main blocks  
BLOCK, MULTI-BLOCK and CHIP ERASE  
FBGA48 (ZA)  
8 x 6 solder balls  
MULTI BLOCK PROTECTION/TEMPORARY  
UNPROTECTION MODES  
ERASE SUSPEND and RESUME MODES  
– Read and Programanother Block during  
Erase Suspend  
Figure 1. Logic Diagram  
LOW POWER CONSUMPTION  
– Stand-by and AutomaticStand-by  
100,000PROGRAM/ERASE CYCLES per  
BLOCK  
V
CC  
20 YEARS DATA RETENTION  
– Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Device Code, M29W400T: 00EEh  
– Device Code, M29W400B: 00EFh  
18  
15  
A0-A17  
DQ0-DQ14  
W
E
DQ15A–1  
BYTE  
RB  
M29W400T  
M29W400B  
DESCRIPTION  
G
The M29W400 is a non-volatile memory that may  
be erasedelectrically at theblock or chip level and  
programmedin-systemon a Byte-by-ByteorWord-  
by-Wordbasisusing onlya single2.7Vto 3.6VVCC  
supply. For Program and Erase operations the  
necessary high voltages are generated internally.  
The device can also be programmed in standard  
programmers.  
RP  
V
SS  
AI02065  
The array matrix organisationallows each block to  
be erased and reprogrammed without affecting  
other blocks. Blocks can be protected againstpro-  
graming and erase on programming equipment,  
November 1999  
1/34  
This is informationon a product still in productionbut not recommendedfor new designs.  

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