Datasheet > M28F420-120YM6TR

M28F420-120YM6TR

更新时间： 2023-01-02 17:13:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器光电二极管
页数	文件大小	规格书
2页	17K
描述
512KX8 FLASH 12V PROM, 120ns, PDSO44, SO-44

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数据手册

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M28F420-120YM6TR 数据手册

M28F420

4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Flash Memory

5V ± 10% SUPPLY VOLTAGE

12V ± 5% or ± 10% PROGRAMMING

VOLTAGE

FASTACCESS TIME: 60ns

PROGRAM/ERASE CONTROLLER (P/E.C.)

AUTOMATIC STATIC MODE

MEMORY ERASE in BLOCKS

– Boot Block (Bottom location) with hardware

write and erase protection

SO44 (M)

– Parameter and Main Blocks

100,000 PROGRAM/ERASE CYCLES

LOW POWER CONSUMPTION

20 YEARS DATARETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– ManufacturerCode: 0020h

– Device Code: 00FAh

Figure 1. Logic Diagram

DESCRIPTION

The M28F420 Flash memory is a non-volatile

memorythat may beerasedelectricallyat theblock

level and programmed by byte or by word.

DQ15A–1

Signal Names

A0-A17

A0-A16

DQ0-DQ7

DQ8-DQ14

DQ15A–1

Address Inputs

DQ0-DQ14

BYTE

Data Input / Outputs

Data Input/Output or Address Input

Chip Enable

M28F420

Output Enable

Write Enable

BYTE

Byte/Word Organization

Write Protect

Reset/Power Down/Boot Block

Unlock

AI01130E

V_PP

V_CC

V_SS

Program & Erase Supply Voltage

Supply Voltage

Ground

B28F420/808

1/2

Complete data available on DATA-on-DISC CD-ROM or at www.st.com

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