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M28F102-120N6TR PDF预览

M28F102-120N6TR

更新时间: 2024-02-08 21:47:37
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
20页 174K
描述
64KX16 FLASH 12V PROM, 120ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40

M28F102-120N6TR 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:10 X 14 MM, PLASTIC, TSOP-40针数:40
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.83
Is Samacsys:N最长访问时间:120 ns
JESD-30 代码:R-PDSO-G40长度:12.4 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
端子数量:40字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL编程电压:12 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL类型:NOR TYPE
宽度:10 mmBase Number Matches:1

M28F102-120N6TR 数据手册

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M28F102  
1 Megabit (64K x 16, Chip Erase) FLASH MEMORY  
FAST ACCESS TIME: 90ns  
LOW POWER CONSUMPTION  
– Standby Current: 100µA Max  
10,000 ERASE/PROGRAM CYCLES  
12V PROGRAMMING VOLTAGE  
TYPICAL BYTE PROGRAMMING TIME 10µs  
(PRESTO F ALGORITHM)  
ELECTRICALCHIP ERASE in 1s RANGE  
PLCC44 (K)  
TSOP40 (N)  
10 x 14mm  
INTEGRATED ERASE/PROGRAM-STOP  
TIMER  
OTP COMPATIBLE PACKAGES and  
PINOUTS for PLCC44 and TSOP40  
Figure 1. Logic Diagram  
EXTENDED TEMPERATURE RANGES  
DESCRIPTION  
The M28F102 FLASH MEMORY is a non-volatile  
memory which may be erased electrically at the  
chip level and programmed word-by-word. It is  
organised as 64K words of 16 bits. It uses a com-  
mand register architecture to select the operating  
modes and thus provides a simple microprocessor  
interface. The M28F102 FLASH MEMORY is suit-  
able for applications where the memory has to be  
reprogrammed in the equipment. The access time  
of 100ns makes the device suitable for use in high  
speed microprocessor systems.  
V
V
PP  
CC  
16  
16  
A0-A15  
DQ0-DQ15  
W
E
M28F102  
Table 1. Signal Names  
G
A0 - A15  
Address Inputs  
Data Inputs / Outputs  
Chip Enable  
DQ0 - DQ15  
E
V
SS  
AI00627B  
G
Output Enable  
Write Enable  
W
VPP  
VCC  
VSS  
Program Supply  
Supply Voltage  
Ground  
September 1995  
1/20  

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