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M28C16-15WBS6 PDF预览

M28C16-15WBS6

更新时间: 2024-09-29 22:19:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
19页 135K
描述
16 Kbit 2Kb x8 Parallel EEPROM

M28C16-15WBS6 数据手册

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M28C16A  
M28C17A  
16 Kbit (2Kb x8) Parallel EEPROM  
FASTACCESS TIME:  
– 150ns at 5V  
– 250ns at 3V  
SINGLE SUPPLYVOLTAGE:  
28  
±
– 5V 10% for M28C16Aand M28C17A  
– 2.7V to 3.6V for M28C16-xxW  
LOW POWER CONSUMPTION  
FAST WRITE CYCLE  
1
PDIP28 (BS)  
PLCC32 (KA)  
– 32 Bytes Page Write Operation  
– Byte or Page Write Cycle: 5ms  
ENHANCED END OF WRITE DETECTION  
– Ready/BusyOpen Drain Output  
– Data Polling  
28  
1
SO28 (MS)  
300 mils  
TSOP28 (NS)  
8 x13.4mm  
– Toggle Bit  
PAGE LOAD TIMER STATUS BIT  
HIGH RELIABILITYSINGLE POLYSILICON,  
CMOS TECHNOLOGY  
– Endurance>100,000 Erase/Write Cycles  
– Data Retention >40 Years  
Figure 1. Logic Diagram  
JEDEC APPROVED BYTEWIDE PIN OUT  
DESCRIPTION  
V
CC  
The M28C16Aand M28C17Aare 2K x8 low power  
ParallelEEPROMfabricatedwithSTMicroelectron-  
icsproprietarysinglepolysiliconCMOStechnology.  
The device offers fast access time with low power  
dissipationand requires a 5V or 3V power supply.  
11  
8
A0-A10  
DQ0-DQ7  
W
E
M28C16A  
M28C17A  
Table 1. Signal Names  
A0-A10  
Address Input  
Data Input / Output  
Write Enable  
Chip Enable  
RB  
DQ0-DQ7  
G
W
E
G
Output Enable  
Ready / Busy  
Supply Voltage  
Ground  
V
SS  
AI02109  
RB  
VCC  
VSS  
August 1998  
1/19  

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