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M0280RJ250 PDF预览

M0280RJ250

更新时间： 2024-02-09 04:37:11
品牌 Logo 应用领域
力特 - LITTELFUSE 软恢复二极管
页数 文件大小 规格书
9页 693K
描述
Rectifier Diode, 1 Phase, 1 Element, 280A, 2500V V(RRM), Silicon,

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M0280RJ250 技术参数

生命周期：ActiveReach Compliance Code：compliant
风险等级：5.75应用：SOFT RECOVERY
外壳连接：ANODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.71 VJESD-30 代码：O-MUPM-D1
最大非重复峰值正向电流：4950 A元件数量：1
相数：1端子数量：1
最高工作温度：125 °C最低工作温度：-40 °C
最大输出电流：280 A封装主体材料：METAL
封装形状：ROUND封装形式：POST/STUD MOUNT
认证状态：Not Qualified最大重复峰值反向电压：2500 V
最大反向电流：20000 µA最大反向恢复时间：2.8 µs
表面贴装：NO端子形式：SOLDER LUG
端子位置：UPPERBase Number Matches：1

M0280RJ250 数据手册

 浏览型号M0280RJ250的Datasheet PDF文件第1页浏览型号M0280RJ250的Datasheet PDF文件第2页浏览型号M0280RJ250的Datasheet PDF文件第3页浏览型号M0280RJ250的Datasheet PDF文件第5页浏览型号M0280RJ250的Datasheet PDF文件第6页浏览型号M0280RJ250的Datasheet PDF文件第7页 
Soft Recovery Diode Types M0280S/R#200 to M0280S/R#250  
5.0 Reverse Recovery Loss  
The following procedure is recommended for use where it is necessary to include reverse recovery loss.  
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse  
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.  
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated  
from:  
TSINK TJ (MAX ) E   
Where k = 0.2314 (°C/W)/s  
k f RthJK  
E = Area under reverse loss waveform per pulse in joules (W.s.)  
f = Rated frequency in Hz at the original sink temperature.  
RthJK = d.c. thermal resistance (°C/W)  
The total dissipation is now given by:  
W W(original) Ef  
(tot)  
NOTE 1 - Reverse Recovery Loss by Measurement  
This device has a low reverse recovered charge and peak reverse recovery current. When measuring the  
charge, care must be taken to ensure that:  
(a) AC coupled devices such as current transformers are not affected by prior passage of high  
amplitude forward current.  
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope  
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.  
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically  
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this  
snubber is shown below:  
Vr  
di  
CS   
dt  
R2 4  
Where: Vr = Commutating source voltage  
CS = Snubber capacitance  
R = Snubber resistance  
6.0 Snubber Components  
When selecting snubber components, care must be taken not to use excessively large values of snubber  
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to  
device damage due to the large resultant values of snubber discharge current. If required, please consult  
the factory for assistance.  
Data Sheet. Types M0280S/R#200 to M0280S/R#250 Issue 2  
Page 4 of 9  
November 2014  
1234567...9

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