Datasheet > LY62256DV

LY62256DV

更新时间： 2024-01-06 11:07:19

品牌	Logo	应用领域
台湾来扬 - LYONTEK		静态存储器
页数	文件大小	规格书
14页	208K
描述
32K X 8 BIT LOW POWER CMOS SRAM

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LY62256DV 数据手册

LY62256

32K X 8 BIT LOW POWER CMOS SRAM

Rev. 2.6

REVISION HISTORY

Revision

Rev. 1.0.

Rev. 2.0.

Rev. 2.1.

Rev. 2.2

Rev. 2.3

Rev. 2.4

Description

Initial Issue

Revised Vcc Range(Vcc=4.5~5.5V => 2.7~5.5V)

Revised I_SB1

Issue Date

Jul.25.2004

May.4.2005

May.13.2005

Aug.29.2005

Feb.24.2006

Jul.31.2006

Adding PKG type : skinny P-DIP

Revised V_IH(min)=2.4V, V_IL(max)=0.6V

Revised V_IH(min)=2.4V, V_IL(max)=0.6V (V_CC=2.7~3.6V)

V_IH(min)=2.4V, V_IL(max)=0.8V (V_CC=4.5~5.5V)

Revised STSOP Package Outline Dimension

Added SL grade

Rev. 2.5

Rev. 2.6

Mar.26.2008

Mar.30.2009

℃

Added I_SB1/I_DRvalues when T_A= 25 and T_A= 40

FEATURES ORDERING INFORMATION

Revised

Lead free and green package available to Green package

available

ORDERING INFORMATION

Added packing type in

Revised I_SB1(MAX)

Revised V_TERMto V_T1and V_T2

Revised Test Condition of I_SB1/I_DR

ABSOLUTE MAXIMUN RATINGS

Deleted T_SOLDERin

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

12 3 4 5 6 7...14

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