Datasheet > LY24C04SN

LY24C04SN

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
台湾来扬 - LYONTEK		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
15页	212K
描述
EEPROM,

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数据手册

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LY24C04SN 数据手册

LY24C02/04/08/16

2K/4K/8K/16K-bit 2-Wire Serial EEPROM

Preliminary. 0.4

FEATURES

GENERAL DESCRIPTION

2-wire serial interface

Automatic word address increment

Operating voltage:1.8V~5.5V

Operating current

Maximum write current: <3mA at 5.5V

Maximum read current: <0.5mA at 5.5V

Maximum stand-by current: <5uA at 5.5V

16-byte page buffer

Hardware controlled write protection

EEPROM programming voltage generated on

chip

The LY24C02/04/08/16 is a 2,048 / 4,096 / 8192 /

16,384-bit serial read/write non-volatile memory

device, supporting the standard 2 wire serial

interface. It is fabricated using most advanced

CMOS technology. It has been developed for low

power and low voltage application (1.8V to

5.5V).The LY24C02/04/08/16 is guaranteed for

1,000,000 erase/write cycles and 100 years data

retention.

1,000,000 erase/write cycle

100 years data retention

Operating temperature range

℃

to +70 (commercial)

，

8-pin DIP SOP TSSOP package

Lead free and green package available

FUNCTIONAL BLOCK DIAGRAM

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

40 Hsuch-Fu Rd., Hsinchu, Taiwan.

TEL: 886-3-5165511

FAX: 886-3-5165522

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