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LT2A07G-T PDF预览

LT2A07G-T

更新时间: 2024-01-23 06:27:34
品牌 Logo 应用领域
美台 - DIODES 二极管
页数 文件大小 规格书
2页 59K
描述
Rectifier Diode, 1 Phase, 1 Element, 2A, 1000V V(RRM), Silicon, DO-15,

LT2A07G-T 技术参数

生命周期:Obsolete包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.58
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-15JESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:65 A元件数量:1
相数:1端子数量:2
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified最大重复峰值反向电压:1000 V
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

LT2A07G-T 数据手册

 浏览型号LT2A07G-T的Datasheet PDF文件第2页 
LT2A01G - LT2A07G  
2.0A GLASS PASSIVATED RECTIFIER  
Features  
·
·
·
Glass Passivated Die Construction  
Diffused Junction  
High Current Capability and Low Forward  
Voltage Drop  
A
B
A
·
·
Surge Overload Rating to 65A Peak  
Plastic Material - UL Flammability  
Classification 94V-0  
C
D
Mechanical Data  
DO-15  
·
·
Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Dim  
A
Min  
25.40  
5.50  
Max  
·
·
·
·
Polarity: Cathode Band  
Weight: 0.4 grams (approx)  
Mounting Position: Any  
Marking: Type Number  
B
7.62  
0.889  
3.6  
C
0.686  
2.60  
D
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
LT2A  
01G  
LT2A  
02G  
LT2A  
03G  
LT2A  
04G  
LT2A  
05G  
LT2A  
06G  
LT2A  
07G  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
35  
280  
2.0  
V
A
Average Rectified Output Current  
(Note 1)  
@ TA = 55°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
65  
A
Forward Voltage  
@ IF = 2.0A  
VFM  
IRM  
1.1  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@TA 25°C  
=
5.0  
200  
µA  
@ TA = 100°C  
A2s  
pF  
I2t Rating For Fusing  
I2t  
Cj  
17.5  
40  
Typical Junction Capacitance (Note 2)  
RqJA  
Tj, TSTG  
Typical Thermal Resistance Junction to Ambient  
Operating and Storage Temperature Range  
60  
K/W  
°C  
-65 to +175  
Notes:  
1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
DS29006 Rev. A-2  
1 of 2  
LT2A01G-LT2A07G  

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