This product complies with the RoHS Directive (EU 2002/95/EC).
LNJ8L4C18RAA
Surface Mounting Chip LED
3528 (PLCC4) Type
ꢀAbsolute Maximum Ratings T = 25°C
a
ꢀLighting Color
ꢀRed
Parameter
Power dissipation
Symbol
Rating
Unit
mW
mA
mA
V
PD
IF
190
Forward current
Pulse forward current *
70
100
IFP
VR
Tj
Reverse voltage
5
Junction temperature
Thermal resistance
125
°C
Rth
Topr
130
°C/W
°C
Operating ambient temperature
Storage temperature
–40 to +105
–40 to +125
T
stg
°C
Note) : The condition of IFP is duty 10%, Pulse width 1 msec.
*
ꢀElectro-Optical Characteristics T = 25°C±3°C
a
Parameter
Symbol
Conditions
Min
Typ
Max
1450
10
Unit
mcd
µA
V
1
Luminous intensity *
IO
IR
IF = 50 mA
VR = 5 V
900
1130
Reverse current
2
Forward voltage *
VF
F
IF = 50 mA
IF = 50 mA
IF = 50 mA
IF = 50 mA
IF = 50 mA
2.05
2.30
2.65
1
Luminous flux *
(3.36) (4.20) (5.40)
623
lm
Peak emission wavelength
Dominant emission wavelength *
Spectral half band width
nm
nm
nm
λP
λd
Δλ
3
612
617
20
624
Note) 1: Measurement tolerance: ±11%
*
*
*
2: Measurement tolerance: ±0.15 V
3: Measurement tolerance: ±2 nm
Relative luminous intensity Ta
I
O IF
IF VF
103
104
102
103
102
10
102
10
10
−40 −20
1
1
10
102
1.0
1.5
2.0
2.5
3.0
4.0
0
20
40
80 100
60
Forward current IF (mA)
Forward voltage VF (V)
Ambient temperature Ta (°C)
Relative luminous intensity λP
IF Ta
80
60
100
80
Directive characteristics
0°
10°
10°
20°
20°
30°
30°
60
40°
50°
40°
80°
60°
40°
20°
40
20
50°
40
60°
60°
70°
80°
90°
70°
80°
90°
20
0
0
100 80
60
40
20
0
20
40
60
80 100
550
600
650
700
0
20
40
60
80
100
120
Peak emission wavelength λP (nm)
Publication date: August 2011
Ambient temperature Ta (°C)
Relative luminous intensity (%)
Ver. AEK
1