Datasheet > LN-1A11

LN-1A11

更新时间： 2024-09-29 22:31:11

品牌	Logo	应用领域
其他 - ETC		二极管
页数	文件大小	规格书
1页	59K
描述
INFRARED EMITTING DIODE

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中文翻译

获取价格

数据手册

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LN-1A11 数据手册

INFRARED EMITTING DIODE

Model No. LN-1A11T

ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)

CHARACTERISTIC

Forward current

SYMBOL

RATING

UNIT

IFP

Pulse forward current

Reverse voltage

Topr

Tstg

-20 to +70

-25 to +80

℃

Operating temperature

Storage temperature

Power dissipation

℃

Lead soldering temperature ( 5mm from body ) 260℃ for 5 sec.

ELECTRICAL OPTICAL CHARACTERISTICS (Ta = 25℃)

CHARACTERISTIC

Forward voltage

SYMBOL CONDITION Min.

Typ.

Max.

1.5

UNIT

IF=20mA

VR=5V

1.3

Reverse current

λp

IF=20mA

940

Peak emission wavelength

Spectral band width

Δλ IF=20mA

VBR IR=100uA

Breakdown voltage

Tr/Tf IF=20mA

2θ1/2 IF=20mA

700/500

Switching time Ie from 10% to 90%

Viewing half angle

deg.

mW/cm

ꢀ

IF=20mA

2.0

Power output

Unit : mm

Letex Technology Corp.

中文翻译

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