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LMC835VX PDF预览

LMC835VX

更新时间: 2024-01-25 04:29:28
品牌 Logo 应用领域
德州仪器 - TI 商用集成电路
页数 文件大小 规格书
18页 475K
描述
1 CHANNEL(S), EQUALIZER CIRCUIT, PQCC28, PLASTIC, LCC-28

LMC835VX 技术参数

生命周期:Obsolete包装说明:QCCJ,
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.83
Is Samacsys:N商用集成电路类型:EQUALIZER CIRCUIT
谐波失真:0.1%JESD-30 代码:S-PQCC-J28
长度:11.43 mm频带数量:14
信道数量:1端子数量:28
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装形状:SQUARE封装形式:CHIP CARRIER
认证状态:Not Qualified座面最大高度:4.57 mm
最大压摆率:5 mA最大供电电压 (Vsup):7.5 V
最小供电电压 (Vsup):7.5 V表面贴装:YES
温度等级:INDUSTRIAL端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
宽度:11.43 mmBase Number Matches:1

LMC835VX 数据手册

 浏览型号LMC835VX的Datasheet PDF文件第1页浏览型号LMC835VX的Datasheet PDF文件第2页浏览型号LMC835VX的Datasheet PDF文件第3页浏览型号LMC835VX的Datasheet PDF文件第5页浏览型号LMC835VX的Datasheet PDF文件第6页浏览型号LMC835VX的Datasheet PDF文件第7页 
e
eb  
e
7.5V, D.GND A.GND 0V  
e
Electrical Characteristics (Note 2) V  
7.5V, V  
SS  
DD  
SIGNAL PATH SECTION  
Tested  
Limit  
(Note 3)  
Design  
Limit  
(Note 4)  
Unit  
(Limit)  
Symbol  
Parameter  
Gain Error  
Test Conditions  
Typ  
@
e
e
e
g
g
@
E
A
A
V
A
V
A
V
0 dB  
0 dB  
12 dB Range  
6 dB Range  
0.1  
0.1  
0.1  
0.5  
1
0.5  
0.5  
1
0.6  
dB (Max)  
dB (Max)  
dB (Max)  
@
g
g
dB Range  
1 dB  
(R or R is ON)  
5b 5c  
@
e
(R or R is ON)  
g
g
12 dB Range  
A
A
A
A
A
2 dB  
0.1  
0.1  
0.1  
0.1  
0.2  
0.5  
0.5  
0.5  
0.5  
1
0.6  
0.6  
0.7  
0.7  
1.3  
dB (Max)  
dB (Max)  
dB (Max)  
dB (Max)  
dB (Max)  
V
4b 4c  
@
e
(R or R is ON)  
g
g
12 dB Range  
3 dB  
V
3b 3c  
@
e
(R or R is ON)  
g
g
12 dB Range  
4 dB  
V
2b 2c  
@
e
(R or R is ON)  
g
g
12 dB Range  
5 dB  
V
1b 1c  
@
e
(R or R is ON)  
g
g
12 dB Range  
9 dB  
V
0b 0c  
@
e
g
4V , f 1 kHz  
THD  
Total Harmonic  
Distortion  
A
A
0 dB  
e
12 dB  
e
e
12 dB Range  
e
0.0015  
%
V
V
IN  
rms  
@
e
g
12 dB Range  
e
V
V
IN  
1V , f 1 kHz  
rms  
1V , f 20 kHz  
0.01  
0.1  
0.1  
0.5  
% (Max)  
% (Max)  
e
V
IN  
rms  
@
eb  
g
12 dB Range  
A
V
12 dB  
e
e
e
V
V
4V , f 1 kHz  
0.01  
0.1  
0.1  
0.5  
% (Max)  
% (Max)  
IN  
IN  
rms  
4V , f 20 kHz  
e
rms  
@
e
THD 1%, f 1 kHz  
g
V
Maximum Output Voltage  
Signal to Noise Ratio  
A
0 dB  
k
12 dB Range  
e
5.5  
5.1  
5
V
rms  
(Min)  
O Max  
V
@
e
g
S/N  
A
A
A
0 dB  
e
12 dB  
12 dB Range  
114  
106  
116  
dB  
V
V
V
V
1 V  
ref  
rms  
@
e
V
ref  
eb  
g
12 dB Range  
dB  
dB  
e
1V  
rms  
12 dB  
1V  
rms  
@
g
12 dB Range  
e
V
ref  
@
e
0 dB  
g
I
Leakage Current  
A
V
12 dB Range  
LEAK  
(All internal switches are OFF)  
a
Pin 5 Pin 11, Pin 18 Pin 24  
Pin 2 3, Pin 26  
E
Note 2; Boldface numbers apply at temperature extremes. All other numbers apply at T  
500  
50  
nA (Max)  
nA (Max)  
E
e
e
DD  
eb e e  
7.5V, D.GND A.GND 0V as shown in the  
25 C, V  
§
7.5V, V  
SS  
A
test circuit, Figures 3 and 4.  
Note 3: Guaranteed and 100% production tested.  
Note 4: Guaranteed (but not 100% production tested) over the operating temperature range. These limits are not used to calculate outgoing quality levels.  
Timing Diagrams  
TL/H/6753–4  
Note: To change the gain of the presently selected band, it is not necessary to send DATA 1 (Band Selection) each time.  
FIGURE 2  
4

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