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LMB2S-TP-HF PDF预览

LMB2S-TP-HF

更新时间: 2024-02-28 02:51:20
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
3页 337K
描述
Bridge Rectifier Diode, 1A, 200V V(RRM),

LMB2S-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.75最小击穿电压:200 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):0.95 V
JESD-30 代码:R-PDSO-G4湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:200 V
子类别:Bridge Rectifier Diodes表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

LMB2S-TP-HF 数据手册

 浏览型号LMB2S-TP-HF的Datasheet PDF文件第2页浏览型号LMB2S-TP-HF的Datasheet PDF文件第3页 
M C C  
LMB2S  
THRU  
LMB10S  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
1.0 Amp Single Phase  
Glass Passivated  
Bridge Rectifier  
Low Profile: Typical height of 1.4mm  
High Temperature Soldering Guaranteed:260oC/10 Second  
High surge current capability  
Halogen free available upon request by adding suffix "-HF"  
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
200 to 1000 Volts  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
LMBS -1  
Mechanical Data  
Terminals:Matte tin plated leads, solderable per J-STD-002B  
and JESD22-B102D  
A
MCC  
Part  
Number  
Maximum  
Recurrent  
Marking Peak Reverse  
Voltage  
Maximum  
RMS  
Voltage  
Maximum  
DC  
Blocking  
Voltage  
200V  
400V  
600V  
Device  
C
E
B
D
LMB2S  
LMB4S  
LMB6S  
LMB8S  
LMB10S  
LB2S  
LB4S  
LB6S  
LB8S  
LB10S  
200V  
400V  
600V  
800V  
1000V  
140V  
280V  
420V  
560V  
700V  
F
G
800V  
1000V  
H
J
K
L
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
1.0 A  
0.8 A  
30A  
on aluminum substrate  
on glass-epoxy P.C.B  
8.3ms, half sine  
M
Peak Forward Surge  
Current  
Maximum  
IFSM  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
0.95V  
IFM = 0.4A;  
TA = 25OC  
ꢇꢃꢅ  
ꢐ ꢐ ꢐ ꢐ ꢁꢄꢑ  
ꢂꢂ  
ꢀꢁꢂ  
ꢂꢁꢄ  
ꢂꢈꢉ  
ꢂꢁꢄ  
ꢂꢈꢉ  
ꢄꢆꢊꢃ  
.197  
.205  
4.90  
5.20  
OC  
.024  
0.6  
IR  
TA = 25  
5uA  
500uA  
C
D
----  
.024  
----  
.150  
----  
.059  
.032  
.189  
.165  
.209  
----  
0.60  
----  
3.80  
----  
1.50  
0.80  
4.80  
4.20  
5.30  
TA = 125 O  
C
80O /W  
Typical Thermal  
Resistance  
Note 2  
R
thJA  
C
.236  
.177  
.0009  
.006  
.017  
.252  
.185  
.004  
.012  
.019  
6.00  
4.30  
0.02  
0.15  
0.25  
6.60  
4.70  
0.21  
0.30  
0.70  
25OC/W  
3.0A2s  
L
M
RthJL  
I2t  
Rating For Fusing  
t<8.30ms  
Mounting Pad Layout  
Operating Junction  
and Storage  
Temperature Range  
TJ  
TSTG  
-55to+150  
OC  
0.036"  
(0.9 mm)  
0.126"  
(3.2mm)  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7  
0.225"  
(5.72mm)  
2. Device mounted P.C.B with 0.47x0.47''(12mmx12mm) Copper Pads.  
0.060"  
(1.5mm)  
0.161"  
(4.1mm)  
www.mccsemi.com  
1 of 3  
Revision: B  
2013/01/01  

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