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LM4883SQ PDF预览

LM4883SQ

更新时间: 2024-01-18 19:12:29
品牌 Logo 应用领域
美国国家半导体 - NSC 音频放大器
页数 文件大小 规格书
23页 1239K
描述
Dual 2.1W Audio Amplifier Plus Stereo Headphone

LM4883SQ 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:QCCN, LCC24,.16X.2,20Reach Compliance Code:unknown
风险等级:5.83商用集成电路类型:AUDIO AMPLIFIER
JESD-30 代码:R-PQCC-N24湿度敏感等级:1
功能数量:2端子数量:24
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:QCCN
封装等效代码:LCC24,.16X.2,20封装形状:RECTANGULAR
封装形式:CHIP CARRIER电源:3/5 V
认证状态:Not Qualified子类别:Audio/Video Amplifiers
最大压摆率:10 mA表面贴装:YES
温度等级:INDUSTRIAL端子形式:NO LEAD
端子节距:0.5 mm端子位置:QUAD
Base Number Matches:1

LM4883SQ 数据手册

 浏览型号LM4883SQ的Datasheet PDF文件第3页浏览型号LM4883SQ的Datasheet PDF文件第4页浏览型号LM4883SQ的Datasheet PDF文件第5页浏览型号LM4883SQ的Datasheet PDF文件第7页浏览型号LM4883SQ的Datasheet PDF文件第8页浏览型号LM4883SQ的Datasheet PDF文件第9页 
Electrical Characteristics for Single-Ended Operation (3V) (Notes 3, 7, 13)  
The following specifications apply for VDD = 3V unless otherwise specified. Limits apply for TA = 25˚C.  
Symbol  
Parameter  
Conditions  
LM4883  
Units  
(Limits)  
Typical  
Limit  
(Note 8)  
35  
(Note 9)  
THD+N = 0.5%, f = 1 kHz, RL = 32Ω  
THD+N = 1%, f = 1 kHz, RL = 8Ω  
THD+N = 10%, f = 1 kHz, RL = 8Ω  
PO = 35mW, 20Hz f 20kHz,  
RL = 32Ω  
mW  
mW  
mW  
PO  
Output Power  
125  
150  
THD+N Total Harmonic Distortion+Noise  
.015  
71  
%
Input Floating, 217Hz  
Vripple = 200mVp-p  
dB  
CB = 1µF, RL = 8Ω  
Input Floating, 1kHz  
79  
65  
72  
dB  
dB  
dB  
Vripple = 200mVp-p  
CB = 1µF, RL = 8Ω  
PSRR  
Power Supply Rejection Ratio  
Input grounded, 217Hz  
Vripple = 200mVp-p  
CB = 1µF, RL = 32Ω  
Input grounded, 1kHz  
Vripple = 200mVp-p  
CB = 1µF, RL = 32Ω  
XTALK  
VNO  
Channel Separation  
Output Noise Voltage  
f = 1kHz, CB = 1.0µF  
1kHz, A-weighted  
80  
11  
dB  
µV  
Note 3: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is  
functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which  
guarantee specific performance limits. This assumes that the device operates within the Operating Ratings. Specifications are not guaranteed for parameters where  
no limit is given. The typical value however, is a good indication of device performance.  
Note 4: The maximum power dissipation must be derated at elevated temperatures and is dictated by T  
, θ , and the ambient temperature T . The maximum  
JA A  
JMAX  
allowable power dissipation is P  
= (T  
− T )/θ . For the LM4883SQ, T  
= 150˚C.  
DMAX  
JMAX  
A
JA  
JMAX  
Note 5: Human body model, 100 pF discharged through a 1.5 kresistor.  
Note 6: Machine model, 220 pF–240 pF discharged through all pins.  
Note 7: All voltages are measured with respect to the ground (GND) pins, unless otherwise specified.  
Note 8: Typicals are specified at 25˚C and represent the parametric norm.  
Note 9: Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.  
Note 10: The quiescent power supply current depends on the offset voltage when a practical load is connected to the amplifier.  
Note 11: Output power is measured at the device terminals.  
2
Note 12: When driving 3or 4loads and operating on a 5V supply, the LM4883SQ must be mounted to a circuit board that has a minimum of 2.5in of exposed,  
uninterrupted copper area connected to the SQ package’s exposed DAP.  
Note 13: All measurements taken from Applications Diagram (Figure 3).  
www.national.com  
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