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LL48

更新时间: 2024-10-01 14:54:03
品牌 Logo 应用领域
EIC 二极管
页数 文件大小 规格书
1页 137K
描述
Schottky Barrier Rectifiers

LL48 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:compliant风险等级:5.72
Is Samacsys:N二极管类型:RECTIFIER DIODE
Base Number Matches:1

LL48 数据手册

  
www.eicsemi.com  
SCHOTTKY BARRIER DIODE  
LL48  
MiniMELF (SOD-80C)  
FEATURES :  
Cathode Mark  
• For general purpose applications  
• These diodes feature very low turn-on voltage and  
fast switching. These devices are protected by a  
PN junction guard ring against excessive voltage,  
such as electrostatic discharges  
f 0.063 (1.64)  
0.055 (1.40)  
0.019(0.48)  
0.011(0.28)  
0.142(3.6)  
• This diode is also available in the DO-35 case  
with type designations BAT48.  
0.134(3.4)  
• Pb / RoHS Free  
Mounting Pad Layout  
0.098 (2.50)  
Max.  
MECHANICAL DATA :  
Case: MiniMELF Glass Case (SOD-80C)  
Weight: approx. 0.05g  
0.049 (1.25)Min.  
0.079 (2.00)Min.  
0.197 (5.00)  
REF  
Dimensions in inches and ( millimeters )  
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)  
Parameter  
Symbol  
VRRM  
IF  
Value  
Unit  
Repetitive Peak Reverse Voltage  
Continuous Forward Current  
40  
350(1)  
1(1)  
7.5(1)  
330(1)  
V
mA  
A
IFRM  
Repetitive Peak Forward Current at tp < 1s,  
Forward Surge Current at tp < 10 ms,  
Power Dissipation ,Ta = 80 °C  
IFSM  
A
PD  
mW  
°C/W  
°C  
300(1)  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
Rq  
JA  
TJ  
125  
Ambient Operating Temperature Range  
Storage temperature range  
Ta  
TS  
-65 to + 125  
-65 to + 150  
°C  
°C  
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.  
Electrical Characteristics (TJ = 25°C unless otherwise noted)  
Test Condition  
Min  
Typ  
Max  
Unit  
Parameter  
Symbol  
V(BR)R  
IR = 100 mA (pulsed)  
Reverse Breakdown Voltage  
Reverse Current  
40  
-
-
V
VR = 10 V  
VR = 20 V  
VR = 40 V  
IF = 1mA  
IF = 10mA  
IF = 30mA  
IF = 100mA  
IF = 500mA  
VR = 1V, f = 1MHz  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
5
25  
0.30  
0.40  
0.50  
0.75  
0.90  
IR  
mA  
Pulse Test tp <300ms , d <2%  
Forward Voltage  
Pulse Test tp <300ms , d <2%  
VF  
V
Diode Capacitance  
Cd  
-
12  
-
pF  
Page 1 of 1  
Rev. 02 : March 24, 2005  

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