Datasheet > LED36-SMD5

LED36-SMD5

更新时间： 2022-12-29 20:58:58

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描述
Mid-Infrared Light Emitting Diode

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LED36-SMD5 数据手册

LED36-SMD5

TECHNICAL DATA

Mid-Infrared Light Emitting Diode, SMD

Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown

on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions

InAsSbP with P content 50% are used for good electron confinement.

LED36-SMD5 has a stable ouput power and a lifetime more then 80000 hours.

Features

•

Structure: InAsSb/InAsSbP

Peak Wavelength: typ. 3.65 µm

Optical Ouput Power: typ. 30 µW qCW

Package: SMD 5x5 mm

Specifications

Rating

Typ.

3.65

Item

Condition

Unit

Min.

3.60

0.40

Max.

3.70

0.60

Peak Wavelength

FWHM

T=300 K

150 mA CW

µm

0.50

Quasi-CW

Optical Power

Pulsed

Optical Power

Switching Time

200 mA qCW

µW

1 A

180

200

220

T=300 K

Operation Voltage 200 mA qCW

Operating

Temperature

Emitting Area

Soldering

-240 … +50

300x300

180

°C

µm

°C

Temperature

SMD type package 5x5 mm based on high

thermal conductivity ceramics

Package

Operating Regime

Quasi-CW

•

Maximum current 220 mA

Recommended current 150-200mA

Pulsed

•

Maximum current 1 A

(puls lenght 500 ns, repetition rate 2kHz)

24.11.2010

LED36-SMD5

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