Datasheet > L6 2SC1623 S9014

L6 2SC1623 S9014

更新时间： 2024-01-05 05:00:31

品牌	Logo	应用领域
其他 - ETC		光电二极管
页数	文件大小	规格书
3页	281K
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L6 2SC1623 S9014 PDF

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数据手册

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L6 2SC1623 S9014 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

本资料由东莞长电代理：FUYAT CO.，LTD提供0769-85388861

SOT-23 Plastic-Encapsulate Transistors

SOT-23

2SC1623 TRANSISTOR (NPN)

FEATURES

High DC current gain :h_FE=200(Typ)V_CE=6V, I_C=1mA

High voltage:V_CEO=50V

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

100

200

P_C

150

T_J

℃

Storage Temperature

-55-150

T_stg

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=100μA,I_E=0

I_C=1mA,I_B=0

MIN

TYP

MAX

UNIT

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=100μA,I_C=0

V_CB=60V,I_E=0

μA

0.1

600

0.3

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

DC current gain

200

h_FE

V_CE=6V,I_C=1mA

I_C=100mA,I_B=10mA

V_CE=6V,I_C=10mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

f_T

Transition frequency

MHz

250

CLASSIFICATION OF h_FE

Rank

90-180

135-270

200-400

300-600

Range

Marking

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