Datasheet > KX8N60C

KX8N60C

更新时间： 2024-06-27 12:10:56

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	2504K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KX8N60C 数据手册

DIP Type

MOSFET

N-Channel MOSFET

KX8N60C

TO-220

4.50

1.30

± 0.20

9.90

(8.70)

ø3.60 0.10

0.20

+0.10

–0.05

■ Features

● VDS (V) = 600V

● ID = 7.5 A (VGS = 10V)

● R^DS(ON)＜ 1.2Ω (VGS = 10V)

● Fast switching

1.27

0.10

1.52

0.80

0.10

● Improved dv/dt capability

+0.10

–0.05

0.50

2.40

± 0.20

2.54TYP

[2.54 0.20 ]

2.54TYP

[2.54 0.20 ]

1 GATE

2 DRAIN

3 SOURCE

10.00

± 0.20

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

600

±30

7.5

Unit

Gate-Source Voltage

Tc=25℃

Continuous Drain Current

4.6

Tc=100℃

Pulsed Drain Current

Avalanche Current

7.5

Power Dissipation

147

1.18

230

14.7

4.5

Tc=25℃

Derate above 25℃

W/℃

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

(Note.1)

(Note.2)

dv/dt

V/ns

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Sink

Thermal Resistance.Junction- to-Case

thJA

thJS

62.5

0.5

℃/W

RthJC

0.85

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

℃

Junction Temperature

150

Storage Temperature Range

stg

-55 to 150

Note.1: L = 7.3mH, IAS = 7.5A, VDD = 50V, R

= 25Ω, Starting T

= 25°C

Note.2: I^SD≤ 7.5A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting T

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