Datasheet > KM416V254DT-6

KM416V254DT-6

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
36页	840K
描述
EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40

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KM416V254DT-6 数据手册

KM416C254D, KM416V254D

CMOS DRAM

256K x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION

This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access

of memory cells within the same row. Power supply voltage(+5.0V or +3.3V), Access time (-5,-6 or -7), power consumption(Normal or

Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-

only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 EDO Mode

DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reli-

ability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

• Extended Data Out Mode operation

FEATURES

• 2 CAS Byte/Wrod Read/Write operation

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Self-refresh capability (L-ver only)

• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Part Identification

- KM416C254D/DL (5V, 512 Ref.)

- KM416V254D/DL (3.3V, 512 Ref.)

•

Active Power Dissipation

Unit : mW

5V(512 Ref.)

• Available in 40-pin SOJ 400mil and 44(40)-pin

packages

Speed

-5

3.3V(512 Ref.)

605

495

440

• Triple +5V±10% power supply (5V product)

• Triple +3.3V±0.3V power supply (3.3V product)

-6

255

235

-7

FUNCTIONAL BLOCK DIAGRAM

• Refresh Cycles

Part

VCC

NO.

Refresh

cycle

Refresh period

RAS

UCAS

LCAS

Normal

L-ver

Vcc

Vss

Control

Clocks

VBB Generator

C254D

512

8ms

128ms

V254D 3.3V

Lower

Data in

Buffer

DQ0

Row Decoder

Refresh Timer

Refresh Control

DQ7

Lower

Data out

Buffer

• Performance Range

Speed

-5

Remark

5V only

tRAC

50ns

60ns

70ns

tCAC

tRC

tHPC

Memory Array

262,144 x16

Cells

Refresh Counter

Row Address Buffer

Col. Address Buffer

Upper

Data in

Buffer

15ns

84ns

20ns

-6

15ns 104ns 25ns 5V/3.3V

20ns 124ns 30ns 5V/3.3V

DQ8

DQ15

Upper

Data out

Buffer

-7

A0~A8

Column Decoder

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...36

中文翻译

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与KM416V254DT-6相关器件

型号	品牌	获取价格	描述	数据表
KM416V254DT-7	SAMSUNG	获取价格	EDO DRAM, 256KX16, 70ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40
KM416V254DT-L5	SAMSUNG	获取价格	EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40
KM416V254DT-L6	SAMSUNG	获取价格	EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40
KM416V254DT-L7	SAMSUNG	获取价格	EDO DRAM, 256KX16, 70ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40
KM416V254DT-L8	SAMSUNG	获取价格	EDO DRAM, 256KX16, 80ns, CMOS, PDSO40
KM416V256ATR-8	SAMSUNG	获取价格	Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40, PLASTIC, REVERSE, TSOP2-44/40
KM416V256BJ-8	SAMSUNG	获取价格	Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40, SOJ-40
KM416V256BJ-L8	SAMSUNG	获取价格	Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40, SOJ-40
KM416V256BLJ-6	SAMSUNG	获取价格	Fast Page DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40
KM416V256BLJ-7	SAMSUNG	获取价格	Fast Page DRAM, 256KX16, 70ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40

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