Datasheet > KM416C1000C

KM416C1000C

更新时间： 2024-01-25 22:59:57

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
34页	766K
描述
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

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中文翻译

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数据手册

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KM416C1000C 数据手册

KM416C1000C, KM416C1200C

KM416V1000C, KM416V1200C

CMOS DRAM

1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

DESCRIPTION

This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory

cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power con-

sumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-

before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This

1Mx16 Fast Page Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power

consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

FEATURES

• Fast Page Mode operation

•

Part Identification

• 2 CAS Byte/Word Read/Write operation

• CAS-before-RAS refresh capability

- KM416C1000C/C-L (5V, 4K Ref.)

- KM416C1200C/C-L (5V, 1K Ref.)

- KM416V1000C/C-L (3.3V, 4K Ref.)

- KM416V1200C/C-L (3.3V, 1K Ref.)

• RAS-only and Hidden refresh capability

• Self-refresh capability (L-ver only)

• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Active Power Dissipation

Unit : mW

• Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II)

3.3V

Speed

400mil packages

• Single +5V±10% power supply (5V product)

-5

-6

324

288

504

468

495

440

770

715

• Single +3.3V±0.3V power supply (3.3V product)

FUNCTIONAL BLOCK DIAGRAM

• Refresh Cycles

Part

VCC

Refresh

cycle

Refresh period

RAS

UCAS

LCAS

Vcc

Vss

NO.

Normal

L-ver

Control

Clocks

VBB Generator

C1000C

V1000C

C1200C

V1200C

3.3V

64ms

Lower

128ms

Data in

Buffer

DQ0

Row Decoder

Refresh Timer

Refresh Control

16ms

3.3V

DQ7

Lower

Data out

Buffer

Memory Array

1,048,576 x16

Cells

Refresh Counter

Row Address Buffer

Col. Address Buffer

Upper

Data in

Buffer

• Perfomance Range

A0-A11

(A0 - A9)*1

A0 - A7

(A0 - A9)*1

DQ8

DQ15

Speed

-5

Remark

tRAC

50ns

60ns

tCAC

tRC

tPC

Upper

Data out

Buffer

15ns

90ns

35ns 5V/3.3V

Column Decoder

-6

15ns 110ns 40ns 5V/3.3V

Note) *1 : 1K Refresh

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...34

中文翻译

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与KM416C1000C相关器件

型号	品牌	获取价格	描述	数据表
KM416C1000CJ-5	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, SOJ-42
KM416C1000CJ-6	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42
KM416C1000CJ-L5	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, SOJ-42
KM416C1000CJ-L6	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42
KM416C1000CT-5	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44
KM416C1000CT-6	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44
KM416C1000CT-L6	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44
KM416C1000LLTR-10	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 100ns, CMOS, PDSO44, PLASTIC, REVERSE, TSOP2-50/44
KM416C1004AJ-6	SAMSUNG	获取价格	EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42
KM416C1004AJ-8	SAMSUNG	获取价格	EDO DRAM, 1MX16, 80ns, CMOS, PDSO42, 0.400 INCH, SOJ-42

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