THYRISTOR MODULE
(
)
PD,PE,KK
PK
55GB
UL;E76102（M）
Power Thyristor/Diode Module PK55GB series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 800V are available. and electrically isolated mounting base make
your mechanical design easy.
93.5MAX
80
2- 6.5
3
2
1
●
T(AV)
T(RMS)
TSM
86A, I
I
55A, I
1100A
~
+
–
Internal Configurations
● di/dt 150 A/μs
● dv/dt 500V/μs
16.5
23
23
3-M5
K2
G2
110TAB
K2
G2
（Applications）
3
2
1
K1G1
（A2）�
（K2）�
3
2
1
A1K2
K1
（K2）�
（A2）�
A1K2
Various rectifiers
PK
PE
AC/DC motor drives
Heater controls
Light dimmers
K2
2
K2
G2
3
2
1
1
1
K1G1
（A2）�
（K2）�
A1K2
K1G1
（A2）�
（A1）�
Static switches
Unit：
A
PD
KK
■Maximum Ratings
Ratings
Symbol
Item
Unit
PK55GB40 PD55GB40
KK55GB40 PE55GB40
PK55GB80 PD55GB80
KK55GB80 PE55GB80
VRRM
VRSM
VDRM
400
480
400
800
960
800
V
V
V
＊
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
＊
Symbol
Item
Conditions
Ratings
Unit
A
T（AV）
I
55
＊Average On-State Current
＊R.M.S. On-State Current
＊Surge On-State Current
Single phase, half wave, 180°conduction, Tc：89℃
T（RMS）
I
86
A
Single phase, half wave, 180°conduction, Tc：89℃
1
TSM
I
A
／cycle, 50Hz/60Hz, peak Value, non-repetitive
1000/1100
2
2
2
2
I t
Value for one cycle of surge current
5000
10
A S
＊I t
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
W
W
G（AV）
P
3
FGM
I
3
A
FGM
V
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-State Current
10
V
RGM
V
5
V
1
G
D
DRM
G
150
2500
di／dt
I ＝100mA，Tj＝25℃，V ＝
／
2V ，dI /dt＝0.1A μs
A/μs
V
/
ISO
V
A.C.1minute
＊
Isolation Breakdown Voltage (R.M.S.)
Operating Junction Temperature
Tj
＊
－40 to ＋125
－40 to ＋125
4.7（48）
2.7（28）
170
℃
℃
Tstg
＊Storage Temperature
Mounting（M6） Recommended Value 2.5-3.9（25-40）
Terminal（M5） Recommended Value 1.5-2.5（15-25）
Mounting
Torque
N･ｍ
（㎏f･B）
g
Mass
■Electrical Characteristics
Symbol
Item
Conditions
at V , single phase, half wave, Tj＝125℃
Ratings
10
Unit
mA
mA
V
DRM
I
Repetitive Peak Off-State Current, max.
Repetitive Peak Reverse Current, max.
Peak On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
DRM
RRM
I
DRM
10
＊
＊
at V , single phase, half wave, Tj＝125℃
TM
V
1.35
On-State Current 165A, Tj＝125℃ Inst. measurement
GT
GT
T
D
I ／V
Tj＝25℃，I ＝1A，V ＝6V
100 3
mA V
/
/
1
GD
V
D
DRM
0.25
10
V
μs
Tj＝125℃，V ＝／V
2
1
tgt
T
G
D
DRM
G
I ＝55A，I ＝100mA，Tj＝25℃，V ＝／V ，dI dt＝0.1Aμs
/
/
2
2
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
D
DRM
500
50
dv／dt
Tj＝125℃, V ＝／V , Exponential wave.
V/μs
mA
mA
3
H
I
Tj＝25℃
L
I
Lutching Current, typ.
100
0.50
Tj＝25℃
Junction to case
Rth（j-c）＊Thermal Impedance, max.
℃ W
/
＊mark：Thyristor and Diode part. No mark：Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
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