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KBU801 PDF预览

KBU801

更新时间: 2024-01-12 11:53:28
品牌 Logo 应用领域
KISEMICONDUCTOR 二极管局域网
页数 文件大小 规格书
2页 733K
描述
8 Amp Single Phase Bridge Rectifier 50 to 1000 Volts

KBU801 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PSFM-T4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.69
其他特性:UL RECOGNIZED, HIGH RELIABILITY最小击穿电压:100 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSFM-T4
湿度敏感等级:2最大非重复峰值正向电流:300 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
最大重复峰值反向电压:100 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

KBU801 数据手册

 浏览型号KBU801的Datasheet PDF文件第2页 
KBU801  
THRU  
KI SEMICONDUCTOR  
KBU807  
Features  
8 Amp Single Phase  
Bridge Rectifier  
50 to 1000 Volts  
·
·
·
·
Low Forward Voltage Drop  
Ideal For Printer Circuit Boards  
High Current Capability and High Reliability  
High Surge Current Capability  
KBU  
Maximum Ratings  
A
D
·
·
Operating Temperature: -50°C to +150°C  
Storage Temperature: -50°C to +150°C  
E
Device  
Marking  
Maximum  
Reccurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
B
Catalog  
Number  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
C
KBU801 KBU8A  
KBU802 KBU8B  
KBU803 KBU8D  
KBU804 KBU8G  
KBU805 KBU8J  
KBU806 KBU8K  
KBU807 KBU8M  
35V  
70V  
AC  
-
+
100V  
200V  
400V  
600V  
800V  
1000V  
100V  
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
F
1000V  
G
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
IF(AV)  
8 A  
Tc = 100°C  
(NOTE 1,2 )  
Current  
J
Peak Forward Surge  
Current  
Maximum  
IFSM  
200A  
8.3ms, half sine  
K
L
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.0V  
DIMENSIONS  
TC = 25°C  
INCHES  
MIN  
.895  
.600  
.740  
MM  
MIN  
22.7  
DIM  
A
B
C
D
E
F
G
MAX  
.935  
MAX  
NOTE  
10 mA TC = 25°C  
300mA  
23.7  
17.8  
19.8  
5.7L  
7.5  
---  
.700  
16.8  
18.8  
3.8Æ  
---  
25.4  
1.2  
TC = 100°C  
.780  
.23L  
NOM  
HOLE  
NOM  
.15Æ  
---  
x
x
.300  
--  
.052  
.100  
.048  
1.3  
J
K
L
.268  
---  
.180  
.280  
.140  
.220  
6.8  
---  
4.6  
7.1  
5.3  
5.6  
NOM  
3PL  
*Pulse Test: Pulse Width 300msec, Duty Cycle 2%  
KI SEMICONDUCTOR  

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