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KBU601 PDF预览

KBU601

更新时间: 2024-02-01 16:11:04
品牌 Logo 应用领域
KISEMICONDUCTOR 二极管局域网
页数 文件大小 规格书
2页 61K
描述
6 Amp Single Phase Bridge Rectifier 50 to 1000 Volts

KBU601 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PSFM-T4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.69
其他特性:UL RECOGNIZED, HIGH RELIABILITY最小击穿电压:100 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSFM-T4
湿度敏感等级:2最大非重复峰值正向电流:250 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:6 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
最大重复峰值反向电压:100 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

KBU601 数据手册

 浏览型号KBU601的Datasheet PDF文件第2页 
KBU601  
THRU  
KI SEMICONDUCTOR  
KBU607  
Features  
6 Amp Single Phase  
Bridge Rectifier  
50 to 1000 Volts  
·
·
·
·
·
Low Leakage  
Low Forward Voltage  
Any Mounting Position  
Silver Plated Copper Leads  
Surge Overload Rating Of 200 Amps  
KBU  
Maximum Ratings  
A
D
·
·
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +150°C  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
C
B
Catalog  
Number  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
A
-
+
KBU601  
KBU602  
KBU603  
KBU604  
KBU605  
KBU606  
KBU607  
KBU6A  
KBU6B  
KBU6D  
KBU6G  
KBU6J  
KBU6K  
KBU6M  
35V  
70V  
100V  
200V  
400V  
600V  
800V  
1000V  
100V  
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
E
1000V  
F
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
6.0A  
TA = 65°C  
G
Peak Forward Surge  
Current  
IFSM  
200A  
8.3ms, half sine  
H
I
Maximum Forward  
Voltage Drop Per  
Element  
VF  
1.1V  
IFM = 3.0A;  
TJ = 25°C  
DIMENSIONS  
INCHES  
MIN  
.895  
---  
MM  
MIN  
22.70  
---  
16.80  
3.8Æ  
25.40  
1.20  
6.60  
4.60  
4.70  
DIM  
A
B
C
D
E
MAX  
.935  
.760  
.700  
.23L  
---  
MAX  
NOTE  
23.70  
19.30  
17.80  
5.57L  
---  
1.30  
7.10  
5.60  
5.20  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
.660  
IR  
10mA  
1 mA  
TA = 25°C  
TA = 100°C  
HOLE  
TYP  
.15Æ  
1.00  
.048  
.260  
.180  
.185  
x
x
F
.052  
.280  
.220  
.205  
G
H
I
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
KI SEMICONDUCTOR  

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