CHONGQING PINGYANG ELECTRONICS CO.,LTD.
KBU10A THRU KBU10M
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE:50-1000V
CURRENT:10.0A
FEATURES
·Low leakage
·Low forward voltage
KBU
.935(23.7)
.895(22.7)
.300
(7.5)
·Surge overload ratings-250 Amperes
·Molded structure
.780(19.8)
.740(18.8)
.700(17.8)
.600(16.8)
-
AC
+
.052(1.3) DIA.
.048(1.2) TYP.
1.00
(25.4) MIN.
MECHANICAL DATA
.220(5.6)
.180(4.6)
·Case: Molded plastic
SPACING
.280(7.0)
.268(6.8)
.140
(5.3)
·Epoxy: UL 94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity: Symbols molded or marked on body
·Mounting position: Any
Dimensions in inches and (millimeters)
·Weight: 8.0 grams
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL KBU10A KBU10B KBU10D KBU10G KBU10J KBU10K KBU10M units
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800 1000
560 700
800 1000
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
100
Maximum Average Forward rectified Output
Current at TC=75°C
Io
10.0
250
1.0
A
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
IFSM
VF
IR
A
V
Maximum Forward Voltage Drop per element at
5.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
10
@ TA=25°C
µA
500
@ TA=100°C
per element
I2t
CJ
127
186
10
A2Sec
pF
I2t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
RθJA
°C/W
Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts
2.Thermal Resistance from Junction to Ambientwith units mounted on 0.47×0.47”(12×12mm) copper pads
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