Datasheet > KBPC1504TW

KBPC1504TW

更新时间： 2022-02-26 10:39:30

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	333K
描述
High efficiency

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数据手册

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KBPC1504TW 数据手册

KBPC15005T/W thru KBPC1504T/W

V_RRM= 50 V - 400 V

I_O= 15 A

Single Phase Silicon

Bridge Rectifier

Features

• High efficiency

• Silicon junction

• Metal case

• Types from 50 V to 400 V V_RRM

• Not ESD Sensitive

KBPC-T/W Package

Mechanical Data

Case: Mounted in the bridge encapsulation

Mounting position: Hole for #10 screw

Polarity: Marked on case

Maximum ratings at Tc = 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW

uses KBPC-W package)

KBPC1502T/W KBPC1504T/W

KBPC15005T/W KBPC1501T/W

Conditions

Parameter

Symbol

Unit

V_RRM

V_RMS

V_DC

T_j

200

140

400

280

Repetitive peak reverse voltage

RMS reverse voltage

100

200

400

DC blocking voltage

100

-55 to 150

Operating temperature

Storage temperature

-55 to 150

°C

T_stg

Electrical characteristics at Tc = 25 °C, unless otherwise specified

Single phase, half sine wave, 60 Hz, resistive or inductive load

For capacitive load derate current by 20%

KBPC1502T/W KBPC1504T/W

KBPC15005T/W KBPC1501T/W

Conditions

Parameter

Symbol

Unit

Maximum average forward rectified

current

T_c= 55 °C

I_O

300

1.1

300

1.1

300

1.1

300

1.1

8.3 ms half sine-wave

I_F= 7.5 A

I_FSM

V_F

Peak forward surge current

Maximum instantaneous forward

voltage per leg

T_c= 25 °C

Maximum DC reverse current at

rated DC blocking voltage per leg

I_R

μA

T_c= 100 °C

500

300

500

300

500

300

500

300

Typical junction capacitance ¹

Thermal characteristics

Typical thermal resistance ²

C_j

R_ΘJC

°C/W

2.3

¹- Measured ay 1 MHz and applied reverse voltage of 4.0 V D.C.

²- Device mounted on 300 mm x 300 mm x 1.6 mm Cu plate heatsink

www.genesicsemi.com/silicon-products/bridge-rectifiers/

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