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KBL401 PDF预览

KBL401

更新时间: 2024-02-24 21:34:01
品牌 Logo 应用领域
KISEMICONDUCTOR 二极管
页数 文件大小 规格书
2页 74K
描述
4 Amp Single Phase Bridge Rectifier 50 to 1000 Volts

KBL401 技术参数

生命周期:Active包装说明:R-PSIP-W4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.66Is Samacsys:N
其他特性:HIGH RELIABILITY最小击穿电压:100 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSIP-W4
最大非重复峰值正向电流:150 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:4 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
最大重复峰值反向电压:100 V表面贴装:NO
端子形式:WIRE端子位置:SINGLE
Base Number Matches:1

KBL401 数据手册

 浏览型号KBL401的Datasheet PDF文件第2页 
KBL4005  
KI SEMICONDUCTOR  
THRU  
KBL410  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Features  
4 Amp Single Phase  
Bridge Rectifier  
50 to 1000 Volts  
·
·
·
·
·
Low Leakage  
Low Forward Voltage  
Any Mounting Position  
Silver Plated Copper Leads  
Surge Overload Rating Of 200 Amps  
KBL4/RS4  
Maximum Ratings  
A
·
·
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +150°C  
B
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
Maximum Maximum  
Catalog  
Number  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
AC  
-
+
RS401L  
RS402L  
RS403L  
RS404L  
RS405L  
RS406L  
RS407L  
KBL4005  
KBL401  
KBL402  
KBL404  
KBL405  
KBL406  
KBL410  
35V  
70V  
100V  
C
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
1000V  
H
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
4.0A  
D
TA = 50°C  
G
Peak Forward Surge  
Current  
IFSM  
200A  
8.3ms, half sine  
E
Maximum Forward  
Voltage Drop Per  
Element  
VF  
1.1V  
IFM = 3.0A;  
TJ = 25°C  
DIMENSIONS  
INCHES  
MIN  
.728  
.600  
.750  
.236  
.180  
------  
.048  
MM  
DIM  
A
B
C
D
E
G
H
MAX  
.768  
.640  
---  
.256  
.220  
.083  
.052  
MIN  
18.50  
15.20  
19.00  
6.00  
4.60  
------  
1.20  
MAX  
19.50  
16.30  
---  
6.50  
5.60  
2.10  
1.30  
NOTE  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
IR  
10mA  
1.0mA  
TJ = 25°C  
TJ = 100°C  
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
KI SEMICONDUCTOR  

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