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KBJ606G PDF预览

KBJ606G

更新时间: 2024-01-15 09:43:05
品牌 Logo 应用领域
鲁光 - LGE 二极管
页数 文件大小 规格书
2页 137K
描述
6.0A Glass Passivated Bridge Rectifier

KBJ606G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.72其他特性:UL RECOGNIZED
最小击穿电压:600 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PSFM-T4
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:170 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最大输出电流:2.8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:600 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

KBJ606G 数据手册

 浏览型号KBJ606G的Datasheet PDF文件第2页 
KBJ6005G-KBJ610G  
6.0A Glass Passivated Bridge Rectifier  
Features  
·
·
·
·
·
·
Glass Passivated Die Construction  
KBJ  
High Case Dielectric Strength of 1500V  
RMS  
Dim  
A
B
C
D
E
Min  
Max  
25.20  
15.30  
Low Reverse Leakage Current  
24.80  
14.70  
Surge Overload Rating to 170A Peak  
Ideal for Printed Circuit Board Applications  
P
4.00 Nominal  
N
A
Plastic Material - UL Flammability  
Classification 94V-0  
17.20  
0.90  
7.30  
17.80  
1.10  
7.70  
H
·
UL Listed Under Recognized Component Index,  
File Number E94661  
C
B
D
G
H
J
L
_
3.10 Æ 3.40 Æ  
Mechanical Data  
·
3.30  
1.50  
9.30  
2.50  
3.40  
4.40  
0.60  
3.70  
1.90  
9.70  
2.90  
3.80  
4.80  
0.80  
M
K
J
K
L
Case: Molded Plastic  
E
R
·
Terminals: Plated Leads, Solderable per  
MIL-STD-202, Method 208  
M
N
P
·
·
·
·
·
Polarity: Molded on Body  
Mounting: Through Hole for #6 Screw  
Mounting Torque: 5.0 in-lbs Maximum  
Approx. Weight: 4.6 grams  
G
R
All Dimensions in mm  
Marking: Type Number  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
KBJ  
KBJ  
KBJ  
KBJ  
KBJ  
6005G 601G 602G 604G 606G 608G 610G  
KBJ  
KBJ  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(rMS)  
IO  
RMS Reverse Voltage  
280  
6.0  
V
A
Average Rectified Output Current  
@ TC = 110°C  
Non-Repetitive Peak Forward Surge Current, 8.3 ms single  
half-sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
170  
1.0  
A
Forward Voltage per element  
@ IF = 3.0A  
VFM  
IRM  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@TC = 25°C  
@ TC = 125°C  
5.0  
500  
µA  
I2t Rating for Fusing (t < 8.3ms) (Note 3)  
I2t  
Cj  
120  
80  
A2s  
pF  
Typical Junction Capacitance per Element (Note 1)  
Typical Thermal Resistance (Note 2)  
RqJC  
Tj, TSTG  
1.5  
°C/W  
°C  
Operating and Storage Temperature Range  
-65 to +150  
Notes:  
1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
2. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink.  
3. Non-repetitive, for t > 1ms and < 8.3ms.  
http://www.luguang.cn  
mail:lge@luguang.cn  

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