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K8A5615ETA-DC7B0 PDF预览

K8A5615ETA-DC7B0

更新时间: 2024-02-10 11:55:03
品牌 Logo 应用领域
三星 - SAMSUNG 内存集成电路
页数 文件大小 规格书
60页 1302K
描述
Flash, 16MX16, 90ns, LEAD FREE, FBGA

K8A5615ETA-DC7B0 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:LEAD FREE, FBGA
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.84
最长访问时间:90 ns其他特性:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
启动块:TOPJESD-30 代码:X-PBGA-B
JESD-609代码:e1内存密度:268435456 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:2功能数量:1
字数:16777216 words字数代码:16000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16MX16
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装形状:UNSPECIFIED封装形式:GRID ARRAY
并行/串行:PARALLEL峰值回流温度(摄氏度):260
编程电压:1.8 V认证状态:Not Qualified
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN SILVER COPPER端子形式:BALL
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
类型:NOR TYPEBase Number Matches:1

K8A5615ETA-DC7B0 数据手册

 浏览型号K8A5615ETA-DC7B0的Datasheet PDF文件第2页浏览型号K8A5615ETA-DC7B0的Datasheet PDF文件第3页浏览型号K8A5615ETA-DC7B0的Datasheet PDF文件第4页浏览型号K8A5615ETA-DC7B0的Datasheet PDF文件第5页浏览型号K8A5615ETA-DC7B0的Datasheet PDF文件第6页浏览型号K8A5615ETA-DC7B0的Datasheet PDF文件第7页 
K8A5615ET(B)A  
NOR FLASH MEMORY  
Document Title  
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Advanced  
March 15, 2004  
Advance  
0.1  
Revision  
June 1, 2004  
July 5, 2004  
Preliminary  
Preliminary  
- Change the speed code  
7B : 90ns @54MHz ---> 7B : 88.5ns @54MHz  
0.2  
0.3  
Revision  
- Change the device version ID  
Top boot device : 22ECH --> 22FCH  
Bottom boot device : 22EDH --> 22FDH  
- Not support accelerated quad word program operation  
Revision  
August 3, 2004  
Preliminary  
- Change the initial access time of asynchronous read mode  
K8A56156ET(B)A-DE7C  
tAA : 70ns--->80ns  
tCE : 70ns--->80ns  
- Support accelerated quad word program operation  
0.4  
0.5  
Revision  
- Add the operation flow chart  
August 23, 2004  
Preliminary  
Revision  
September 6, 2004 Preliminary  
- Add the description of range limitation of data read out during pro-  
gram suspend.(Refer to "Program Suspend/Resume" paragragh)  
1.0  
1.1  
Specification is finalized  
January 31, 2005  
Revision  
November 29, 2005  
- tAVDH is changed 7ns to 2ns  
1.2  
"Asynchronous mode may not support read following four sequential  
invalid read condition within 200ns." is added  
September 08, 2006  
1
Revision 1.2  
September, 2006  

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