Datasheet > K7N163601A-HC13

K7N163601A-HC13

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
28页	621K
描述
ZBT SRAM, 512KX36, 4.2ns, CMOS, PBGA119, BGA-119

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K7N163601A-HC13 数据手册

K7N163601A

K7N163201A

K7N161801A

512Kx36/32 & 1Mx18 Pipelined NtRAM^TM

Document Title

512Kx36/32 & 1Mx18-Bit Pipelined NtRAM^TM

Revision History

Draft Date

Rev. No.

History

Remark

March. 21. 2001

May. 10. 2001

Aug. 30. 2001

0.0

0.1

0.2

1. Initial document.

1. Add JTAG Scan Order

1. Add x32 org and industrial temperature .

2. Add 165FBGA package

Preliminary

Dec. 26. 2001

0.3

1. Speed bin merge.

Preliminary

From K7N1636(32/18)09A to K7N1636(32/18)01A.

2. AC parameter change.

tOH(min)/tLZC(min) from 0.8 to 1.5 at -25

tOH(min)/tLZC(min) from 1.0 to 1.5 at -22

tOH(min)/tLZC(min) from 1.0 to 1.5 at -20

May. 10 .2002

May. 22. 2002

1.0

2.0

Final spec release.

Final

Release Icc on page 14.

part #

-25

From

440

400

370

340

280

470

430

400

350

290

-22

-20

-16

-13

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

May 2002

Rev 2.0

12 3 4 5 6 7...28

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与K7N163601A-HC13相关器件

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K7N163601A-HC16	SAMSUNG	ZBT SRAM, 512KX36, 3.5ns, CMOS, PBGA119, BGA-119	获取价格
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K7N163601A-Q(F)C(I)13	SAMSUNG	512Kx36 & 1Mx18 Pipelined NtRAM	获取价格
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K7N163601A-Q(F)C(I)20	SAMSUNG	512Kx36 & 1Mx18 Pipelined NtRAM	获取价格
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