Datasheet > K7A801800M-QC140

K7A801800M-QC140

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
20页	540K
描述
Cache SRAM, 512KX18, 3.8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

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K7A801800M-QC140 数据手册

K7A803600M

K7A801800M

256Kx36 & 512Kx18 Synchronous SRAM

Document Title

256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM

Revision History

Rev. No.

History

Draft Date

Remark

0.0

0.1

Initial draft

April. 10 . 1998 Preliminary

June .08. 1998 Preliminary

Modify DC characteristics( Input Leakage Current test Conditions)

form VDD=VSS to VDD to Max.

0.2

Change DC Characteristics.

Aug . 27. 1998

Preliminary

ISB value from 80mA to 130mA at -16

ISB value from 70mA to 120mA at -15

ISB value from 65mA to 110mA at -14

ISB value from 50mA to 100mA at -10

ISB1 value from 10mA to 30mA

ISB2 value from 10mA to 30mA

0.3

1. Remove speed bin -16.

Sep. 09. 1998

Preliminary

2. Changed DC condition at Icc and parameters

Icc ; from 400mA to 420mA at -15,

from 375mA to 400mA at -14,

from 300mA to 350mA at -10,

ISB ; from 120mA to 150mA at -15,

from 110mA to 130mA at -14,

from 100mA to 120mA at -10,

0.4

0.5

0.6

1.0

1. ADD x32 organization.

Oct. 15. 1998

Dec. 10. 1998

Dec. 23. 1998

Jan. 29. 1999

Preliminary

Final

1. ADD VDDQ Supply voltage( 2.5V I/O )

1. Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.

1. Final spec Release.

2. Remove x32 organization.

2.0

3.0

4.0

5.0

1. Remove VDDQ Supply voltage( 2.5V I/O )

1. Add VDDQ Supply voltage( 2.5V I/O )

1. Change tOE from 4.0ns to 3.8ns at -14 .

Feb. 25. 1999

Final

May. 13. 1999 Final

July. 05. 1999 Final

1. Add tCYC 167MHz and 200MHz.

2. Changed DC condition at Icc and parameters

Icc ; from 420mA to 400mA at -15,

from 400mA to 350mA at -14,

Nov. 19. 1999

Final

from 350mA to 300mA at -10,

6.0

1. Change tCD from 4.0ns to 3.8ns at -14 .

March 14. 2000 Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

March 2000

Rev 6.0

12 3 4 5 6 7...20

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与K7A801800M-QC140相关器件

型号	品牌	获取价格	描述	数据表
K7A801800M-QC150	SAMSUNG	获取价格	Cache SRAM, 512KX18, 3.8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7A801800M-TC14	SAMSUNG	获取价格	Cache SRAM, 512KX18, 3.8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7A801800M-TC15	SAMSUNG	获取价格	Cache SRAM, 512KX18, 3.8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7A801800M-TC20	SAMSUNG	获取价格	Cache SRAM, 512KX18, 3.1ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7A801801A-PC10	SAMSUNG	获取价格	Standard SRAM, 512KX18, 4.5ns, CMOS, PQFP100
K7A801801A-PC11	SAMSUNG	获取价格	Standard SRAM, 512KX18, 4.2ns, CMOS, PQFP100
K7A801801A-PC15	SAMSUNG	获取价格	Standard SRAM, 512KX18, 3.8ns, CMOS, PQFP100
K7A801801A-PC16	SAMSUNG	获取价格	Standard SRAM, 512KX18, 3.5ns, CMOS, PQFP100
K7A801801A-QC100	SAMSUNG	获取价格	Cache SRAM, 512KX18, 4.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7A801801A-QC110	SAMSUNG	获取价格	Cache SRAM, 512KX18, 4.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

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