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K7A801809A-HC180 PDF预览

K7A801809A-HC180

更新时间: 2024-09-25 09:00:27
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
20页 537K
描述
Cache SRAM, 512KX18, 3.3ns, CMOS, PBGA119, BGA-119

K7A801809A-HC180 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:BGA,针数:119
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:3.3 ns其他特性:PIPELINED ARCHITECTURE
JESD-30 代码:R-PBGA-B119长度:22 mm
内存密度:9437184 bit内存集成电路类型:CACHE SRAM
内存宽度:18功能数量:1
端子数量:119字数:524288 words
字数代码:512000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX18封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装形状:RECTANGULAR
封装形式:GRID ARRAY并行/串行:PARALLEL
认证状态:Not Qualified最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:BALL
端子节距:1.27 mm端子位置:BOTTOM
宽度:14 mmBase Number Matches:1

K7A801809A-HC180 数据手册

 浏览型号K7A801809A-HC180的Datasheet PDF文件第2页浏览型号K7A801809A-HC180的Datasheet PDF文件第3页浏览型号K7A801809A-HC180的Datasheet PDF文件第4页浏览型号K7A801809A-HC180的Datasheet PDF文件第5页浏览型号K7A801809A-HC180的Datasheet PDF文件第6页浏览型号K7A801809A-HC180的Datasheet PDF文件第7页 
K7A803609A  
K7A801809A  
256Kx36 & 512Kx18 Synchronous SRAM  
Document Title  
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM  
Revision History  
Rev. No.  
History  
Draft Date  
Remark  
0.0  
1.0  
Initial draft  
May. 24 . 2000 Preliminary  
July. 03. 2000 Final  
1. Final spec Release.  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
July 2000  
Rev 1.0  

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Cache SRAM, 512KX18, 2.8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100