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K6X4008T1F-MB70 PDF预览

K6X4008T1F-MB70

更新时间: 2024-01-05 23:53:18
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三星 - SAMSUNG /
页数 文件大小 规格书
9页 176K
描述
512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6X4008T1F-MB70 数据手册

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K6X4008T1F Family  
CMOS SRAM  
Document Title  
512Kx8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No. History  
Draft Data  
Remark  
0.0  
Initial Draft  
July 29, 2002  
Preliminary  
0.1  
Revised  
October 14, 2002  
December 2, 2002  
March 26, 2003  
Preliminary  
Preliminary  
Preliminary  
- Added 55ns product( Vcc = 3.0V~3.6V)  
0.2  
Revised  
- Added Commercial product  
0.21  
Revised  
- Errata correction : corrected commercial product family name from  
K6X4008T1F-F to K6X4008T1F-B in PRODUCT FAMILY.  
1.0  
Finalized  
September 16, 2003  
Final  
- Changed ICC from 4mA to 2mA  
- Changed ICC1 from 4mA to 3mA  
- Changed ICC2 from 30mA to 25mA  
- Changed ISB1(Commercial) from 15mA to 10mA  
- Changed ISB1(industrial) from 20mA to 10mA  
- Changed ISB1(Automotive) from 30mA to 20mA  
- Changed IDR(Commercial) from 15mA to 10mA  
- Changed IDR(industrial) from 20mA to 10mA  
- Changed IDR(Automotive) from 30mA to 20mA  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 1.0  
September 2003  

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