5秒后页面跳转
K6X4008C1F-VB55 PDF预览

K6X4008C1F-VB55

更新时间: 2024-02-23 16:27:40
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
9页 179K
描述
512Kx8 bit Low Power full CMOS Static RAM

K6X4008C1F-VB55 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:TSOP, TSOP32,.46Reach Compliance Code:compliant
风险等级:5.86最长访问时间:55 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
JESD-609代码:e0内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
端子数量:32字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP
封装等效代码:TSOP32,.46封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:5 V认证状态:Not Qualified
最大待机电流:0.000012 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.03 mA
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL

K6X4008C1F-VB55 数据手册

 浏览型号K6X4008C1F-VB55的Datasheet PDF文件第2页浏览型号K6X4008C1F-VB55的Datasheet PDF文件第3页浏览型号K6X4008C1F-VB55的Datasheet PDF文件第4页浏览型号K6X4008C1F-VB55的Datasheet PDF文件第5页浏览型号K6X4008C1F-VB55的Datasheet PDF文件第6页浏览型号K6X4008C1F-VB55的Datasheet PDF文件第7页 
K6X4008C1F Family  
CMOS SRAM  
Document Title  
512Kx8 bit Low Power full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial draft  
July 30, 2002  
Preliminary  
0.1  
Revised  
- Added Commercial Product.  
November 30, 2002 Preliminary  
September 16, 2003 Final  
1.0  
Finalized  
- Added Lead Free 32-SOP-525 Product  
- Changed ICC from 10mA to 5mA  
- Changed ICC1 from 8mA to 7mA  
- Changed ICC2 from 40mA to 30mA  
- Changed ISB from 3mA to 0.4mA  
- Changed IDR(Commercial) from 15mA to 12mA  
- Changed IDR(industrial) from 20mA to 12mA  
- Changed IDR(Automotive) from 30mA to 25mA  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.0  
1
September 2003  

与K6X4008C1F-VB55相关器件

型号 品牌 获取价格 描述 数据表
K6X4008C1F-VB550 SAMSUNG

获取价格

Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32
K6X4008C1F-VB55T SAMSUNG

获取价格

Standard SRAM, 512KX8, 55ns, CMOS, PDSO32
K6X4008C1F-VB70 SAMSUNG

获取价格

512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-VB70T SAMSUNG

获取价格

Standard SRAM, 512KX8, 70ns, CMOS, PDSO32
K6X4008C1F-VF55 SAMSUNG

获取价格

512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-VF550 SAMSUNG

获取价格

Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32
K6X4008C1F-VF70 SAMSUNG

获取价格

512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-VF700 SAMSUNG

获取价格

Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32
K6X4008C1F-VQ55 SAMSUNG

获取价格

512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-VQ55T SAMSUNG

获取价格

Standard SRAM, 512KX8, 55ns, CMOS, PDSO32