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K6X1008T2D-BF850 PDF预览

K6X1008T2D-BF850

更新时间: 2024-01-03 20:11:28
品牌 Logo 应用领域
三星 - SAMSUNG ISM频段静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 111K
描述
Standard SRAM, 128KX8, 85ns, CMOS, PDSO32, 0.525 INCH, LEAD FREE, PLASTIC, SOP-32

K6X1008T2D-BF850 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP32,.56
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.83最长访问时间:85 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
JESD-609代码:e6长度:20.47 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP32,.56
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3/3.3 V认证状态:Not Qualified
座面最大高度:3 mm最大待机电流:0.000006 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN BISMUTH
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:11.43 mmBase Number Matches:1

K6X1008T2D-BF850 数据手册

 浏览型号K6X1008T2D-BF850的Datasheet PDF文件第2页浏览型号K6X1008T2D-BF850的Datasheet PDF文件第3页浏览型号K6X1008T2D-BF850的Datasheet PDF文件第4页浏览型号K6X1008T2D-BF850的Datasheet PDF文件第5页浏览型号K6X1008T2D-BF850的Datasheet PDF文件第6页浏览型号K6X1008T2D-BF850的Datasheet PDF文件第7页 
K6X1008T2D Family  
CMOS SRAM  
Document Title  
128Kx8 bit Low Power CMOS Static RAM  
Revision History  
Revision No. History  
Draft Data  
Remark  
0.0  
0.1  
Initial draft  
July 15, 2002  
Preliminary  
Revised  
December 4, 2002  
Preliminary  
- Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type.  
- Added Commercial product.  
- Added 55ns product( Vcc = 3.0V~3.6V)  
0.2  
1.0  
Revised  
June 23, 2003  
Preliminary  
Final  
- Added Lead Free 32-SOP-525 Product  
- Added Lead Free 32-TSOP1-0820F Product  
Finalized  
September 16, 2003  
- Changed ICC from 3mA to 2mA  
- Changed ICC2 from 25mA to 20mA  
- Changed ISB1(Commercial) from 10µA to 6µA  
- Changed ISB1(industrial) from 10µA to 6µA  
- Changed ISB1(Automotive) from 20µA to 10µA  
- Changed IDR(Commercial) from 10µA to 6µA  
- Changed IDR(industrial) from 10µA to 6µA  
- Changed IDR(Automotive) from 20µA to 10µA  
2.0  
Revised  
March 27, 2005  
Final  
- Changed ISB1 of Automotive product from 10µA to 25µA  
- Changed IDR of Automotive product from 10µA to 25µA  
- Added Lead Free Products  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 2.0  
March 2005  

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