Datasheet > K6T2008U2M-YF850

K6T2008U2M-YF850

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
9页	146K
描述
Standard SRAM, 256KX8, 85ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

K6T2008U2M-YF850 数据手册

K6T2008V2M, K6T2008U2M Family

CMOS SRAM

Document Title

256Kx8 bit Low Power and Low Voltage CMOS Static RAM

Revision History

Revision No. History

Draft Data

Remark

0.0

0.1

1.0

Design target

Initial draft

January 30, 1997

April 7, 1997

Advance

Preliminary

Final

Finalize

November 27, 1997

- Improved VIL(Min.): 0.4V ® 0.6V

- Erase reverse type package

- Change speed bin

KM68V2000: 70/85ns

KM68V2000I, KM68U2000, KM68U2000I : 85/100ns

- Improved standby current

Commercial product: 15mA ® 10mA

Industrial product: 30mA ® 15mA

- Increased Power dissipation: 0.7W ® 1.0W

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.

Revision 1.0

November 1997

12 3 4 5 6 7...9

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
K6T2008V2A	SAMSUNG	获取价格	256Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T2008V2A-B	SAMSUNG	获取价格	256Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T2008V2A-F	SAMSUNG	获取价格	256Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T2008V2A-FF70	SAMSUNG	获取价格	256Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T2008V2A-FF70T	SAMSUNG	获取价格	Standard SRAM, 256KX8, 70ns, CMOS, PBGA36
K6T2008V2A-FF85	SAMSUNG	获取价格	256Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T2008V2A-FF850	SAMSUNG	获取价格	Standard SRAM, 256KX8, 85ns, CMOS, PBGA36, 6 X 7 MM, FBGA-48/36
K6T2008V2A-FF85T	SAMSUNG	获取价格	Standard SRAM, 256KX8, 85ns, CMOS, PBGA36
K6T2008V2A-TB70	SAMSUNG	获取价格	256Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T2008V2A-TB700	SAMSUNG	获取价格	Standard SRAM, 256KX8, 70ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32