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K4E151611C-JL50 PDF预览

K4E151611C-JL50

更新时间： 2023-08-15 00:00:00
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器光电二极管
页数 文件大小 规格书
35页 553K
描述
EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42

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K4E151611C-JL50 数据手册

 浏览型号K4E151611C-JL50的Datasheet PDF文件第2页浏览型号K4E151611C-JL50的Datasheet PDF文件第3页浏览型号K4E151611C-JL50的Datasheet PDF文件第4页浏览型号K4E151611C-JL50的Datasheet PDF文件第5页浏览型号K4E151611C-JL50的Datasheet PDF文件第6页浏览型号K4E151611C-JL50的Datasheet PDF文件第7页 
K4E171611C, K4E151611C  
K4E171612C, K4E151612C  
CMOS DRAM  
1M x 16Bit CMOS Dynamic RAM with Extended Data Out  
DESCRIPTION  
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of  
memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K  
Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features  
of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-  
refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung¢ s advanced CMOS pro-  
cess to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer,  
personal computer and portable machines.  
FEATURES  
• Part Identification  
• Extended Data Out Mode operation  
(Fast Page Mode with Extended Data Out)  
• 2 CAS Byte/Word Read/Write operation  
- K4E171611C-J(T)(5V, 4K Ref.)  
• CAS-before-RAS refresh capability  
- K4E151611C-J(T) (5V, 1K Ref.)  
• RAS-only and Hidden refresh capability  
• Self-refresh capability (L-ver only)  
- K4E171612C-J(T)(3.3V, 4K Ref.)  
- K4E151612C-J(T)(3.3V, 1K Ref.)  
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs  
• Early Write or output enable controlled write  
• JEDEC Standard pinout  
• ActivePowerDissipation  
Unit : mW  
5V  
3.3V  
Speed  
• Available in plastic SOJ 400mil and TSOP(II) packages  
• Single +5V±10% power supply (5V product)  
• Single +3.3V±0.3V power supply (3.3V product)  
4K  
1K  
4K  
1K  
-45  
-50  
-60  
360  
324  
288  
540  
504  
468  
550  
495  
440  
825  
770  
715  
FUNCTIONAL BLOCK DIAGRAM  
• Refresh Cycles  
Part  
Refresh Refresh period  
VCC  
RAS  
UCAS  
LCAS  
W
NO.  
cycle  
Vcc  
Vss  
Normal L-ver  
Control  
Clocks  
VBB Generator  
K4E171611C  
5V  
4K  
1K  
64ms  
16ms  
K4E171612C 3.3V  
K4E151611C 5V  
Lower  
128ms  
Data in  
Buffer  
DQ0  
to  
Row Decoder  
Refresh Timer  
Refresh Control  
K4E151612C 3.3V  
DQ7  
Lower  
Data out  
Buffer  
Memory Array  
1,048,576 x16  
Cells  
OE  
Refresh Counter  
Row Address Buffer  
Col. Address Buffer  
Upper  
Data in  
Buffer  
• Performance Range  
DQ8  
to  
DQ15  
Speed  
-45  
Remark  
tRAC  
45ns  
50ns  
60ns  
tCAC  
13ns  
15ns  
tRC  
tHPC  
A0-A11  
(A0 - A9)*1  
A0 - A7  
Upper  
Data out  
Buffer  
69ns  
84ns  
16ns 5V/3.3V  
20ns 5V/3.3V  
Column Decoder  
(A0 - A9)*1  
-50  
-60  
17ns 104ns 25ns 5V/3.3V  
Note) *1 : 1K Refresh  
SAMSUNG ELECTRONICS CO., LTD. reserves the right to  
change products and specifications without notice.  
1234567...35

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与K4E151611C-JL50相关器件

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K4E151611C-JL500 SAMSUNG

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 		EDO DRAM, 1MX16, 50ns, CMOS, PDSO42,
K4E151611C-JL600 SAMSUNG

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 		EDO DRAM, 1MX16, 60ns, CMOS, PDSO42,
K4E151611C-T4500 SAMSUNG

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 		EDO DRAM, 1MX16, 45ns, CMOS, PDSO44, TSOP2-50/44
K4E151611C-T5000 SAMSUNG

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 		EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, TSOP2-50/44
K4E151611C-T6000 SAMSUNG

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 		EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, TSOP2-50/44
K4E151611C-TC450 SAMSUNG

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 		EDO DRAM, 1MX16, 45ns, CMOS, PDSO44,
K4E151611C-TC45T SAMSUNG

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 		EDO DRAM, 1MX16, 45ns, CMOS, PDSO44,
K4E151611C-TC50T SAMSUNG

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 		EDO DRAM, 1MX16, 50ns, CMOS, PDSO44,
K4E151611C-TC60T SAMSUNG

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 		EDO DRAM, 1MX16, 60ns, CMOS, PDSO44,
K4E151611C-TL45 SAMSUNG

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 		EDO DRAM, 1MX16, 45ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44

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