Datasheet > K2229

K2229

更新时间： 2024-01-09 23:43:44

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	392K
描述
Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

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数据手册

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K2229 数据手册

2SK2229

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)

2SK2229

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

ꢀ

4-V gate drive

Low drain−source ON resistance

High forward transfer admittance

: R = 0.12 Ω (typ.)

DS (ON)

: |Y | = 5.0 S (typ.)

Low leakage current

Enhancement mode

: I

= 100 µA (max) (V

= 60 V)

DSS

: V = 0.8~2.0 V (V

= 10 V, I = 1 mA)

Maximum Ratings

(Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain−source voltage

±20

DSS

Drain−gate voltage (R

= 20 kΩ)

DGR

Gate−source voltage

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

1.3

Drain power dissipation

JEDEC

JEITA

―

Single pulse avalanche energy

(Note 2)

129

Avalanche current

0.13

TOSHIBA

2-8M1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 0.54 g (typ.)

150

Storage temperature range

−55~150

stg

Thermal Characteristics

Characteristics

Symbol

Max

96.1

Unit

Thermal resistance, channel to

ambient

°C / W

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V = 25 V, T = 25°C (initial), L = 7 mH, R = 25 Ω, I = 5 A

DD ch

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2004-07-06

12 3 4 5 6

中文翻译

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