K1109
N-CHANNEL JFET
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified )
PARAMETER
SYMBOL
VDSX
VGDO
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Drain Voltage
Drain Current
20
-20
V
10
mA
mA
mW
°C
Gate Current
IG
10
Total Power Dissipation
Junction Temperature
Storage Temperature
PD
80
TJ
+125
-55 ~ +125
TSTG
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
IDSS
TEST CONDITIONS
VDS=5.0V, VGS=0
MIN TYP MAX UNIT
Drain Current
40
600
-1.0
μA
V
Gate Off Voltage
VGS(OFF)
lYFSl
CISS
VDS=5.0V, ID=1.0μA
VDS=5.0V, VGS=0, f=1kHz
VDS=5.0V, VGS=0, f=1.0MHz
-0.1
Forward Transfer Admittance
Input Capacitance
Noise Voltage
600 1600
μS
pF
V
7.0
1.8
8.0
3.0
NV
CLASSIFICATION OF IDSS
RANK
J32
J33
J34
J35
J36
J37
300-600
RANGE
40-70
60-110
90-180
150-300
200-450
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-009.Ga
www.unisonic.com.tw