JST06F-800B
JieJie Microelectronics CO. , Ltd.
Peak pulse voltage
(Tj=25℃; non-repetitive,off-state;FIG.7)
Vpp
4
kV
ELECTRICAL CHARACTERISTICS (Tj=25℃unless otherwise specified)
Symbol
Test Condition
Quadrant
Ⅰ-Ⅱ-Ⅲ
Ⅳ
Value
Unit
50
70
1
IGT
MAX.
mA
VD=12V RL=33Ω
VGT
VGD
ALL
MAX.
MIN.
V
V
VD=VDRM Tj=125℃
RL=3.3KΩ
ALL
0.2
Ⅰ-Ⅲ-Ⅳ
70
80
60
500
10
3
IL
MAX.
mA
IG=1.2IGT
Ⅱ
IH
IT=200mA
MAX.
MIN.
MIN.
mA
V/μs
V/μs
dV/dt
VD=540V Gate Open Tj=125℃
(dV/dt)c (dI/dt)c=2.7A/ms, Tj=125℃
ton
IG=80mA IA=400mA IR=40mA
TYP.
μs
Tj=25℃
toff
30
STATIC CHARACTERISTICS
Symbol
VTM
Parameter
ITM=8.5A tp=380μs
Value(MAX.)
Unit
V
Tj=25℃
Tj=125℃
Tj=125℃
Tj=25℃
Tj=125℃
1.5
0.82
57
VTO
Threshold voltage
Dynamic resistance
V
RD
mΩ
μA
mA
IDRM
IRRM
5
VD=VDRM VR=VRRM
0.3
THERMAL RESISTANCES
Symbol
Parameter
junction to case (AC)
junction to ambient (AC)
Value
3.2
Unit
℃/W
℃/W
Rth(j-c)
Rth(j-a)
60
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