JST02K-800SW
JieJie Microelectronics CO. , Ltd.
Peak pulse voltage
(Tj=25℃; non-repetitive,off-state;FIG.8)
Vpp
4
kV
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Symbol
IGT
Test Condition
Quadrant
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
Value
Unit
mA
V
MAX.
MAX.
10
1
VD =12V RL =33Ω
VGT
VD =VDRM Tj =125℃
RL =3.3KΩ
VGD
Ⅰ-Ⅱ-Ⅲ
MIN.
0.2
V
Ⅰ-Ⅲ
20
30
IL
MAX.
mA
IG =1.2IGT
Ⅱ
IH
dV/dt
(dI/dt)c
ton
IT =100mA
MAX.
MIN.
MIN.
15
mA
V/μs
A/ms
VD=540V Gate Open Tj =125℃
(dV/dt)c=10V/μs Tj=125℃
500
1.5
2.5
25
IG=20mA IA=200mA IR=20mA
Tj=25℃
TYP.
μs
toff
STATIC CHARACTERISTICS
Symbol
Parameter
Value(MAX.)
Unit
V
VTM
VTO
RD
ITM =3A tp=380μs
Tj=25℃
Tj=125℃
Tj=125℃
Tj=25℃
Tj=125℃
1.5
0.93
146
5
Threshold voltage
Dynamic resistance
V
mΩ
μA
mA
IDRM
IRRM
VD =VDRM VR =VRRM
0.15
THERMAL RESISTANCES
Symbol
Parameter
junction to case (AC)
junction to ambient (AC)
Value
6.5
Unit
℃/W
℃/W
Rth(j-c)
Rth(j-a)
145
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