是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DIE |
包装说明: | UNCASED CHIP, R-XUUC-N5 | 针数: | 8 |
Reach Compliance Code: | unknown | 风险等级: | 5.37 |
最大漏极电流 (Abs) (ID): | 0.25 A | FET 技术: | METAL SEMICONDUCTOR |
JESD-30 代码: | R-XUUC-N5 | JESD-609代码: | e0 |
端子数量: | 5 | 最高工作温度: | 175 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | UNCASED CHIP | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 2.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | NO LEAD | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
JS8836A-AS | TOSHIBA | TRANSISTOR C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MOSFET, DIE-8, FET RF Small Signal |
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JS8837A-AS | TOSHIBA | TRANSISTOR RF SMALL SIGNAL, FET, DIE-16, FET RF Small Signal |
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JS8838A-AS | TOSHIBA | TRANSISTOR RF POWER, FET, DIE-24, FET RF Power |
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JS8850A-AS | TOSHIBA | MICROWAVE POWER GaAs FET |
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JS8851-AS | TOSHIBA | TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MOSFET, DIE-8, FET RF Small Signal |
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JS8853-AS | TOSHIBA | TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MOSFET, DIE-6, FET RF Small Signal |
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