JEU15D3U for ESD Protection
JieJie Microelectronics CO. , Ltd
ABSOLUTE MAXIMUM RATINGS (TA=25ºC, RH=45%-75%, unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak pulse power dissipation on 8/20μs
waveform
PPP
2000
W
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
+/- 30
+/- 30
VESD
kV
Lead soldering temperature
TL
TJ
260 (10 sec.)
-55 to +125
-55 to +150
℃
℃
℃
Operating junction temperature range
Storage temperature range
TSTG
ELECTRICAL CHARACTERISTICS (TA=25℃)
Parameter
Symbol
VRWM
VBR
Conditions
Min
Typ
Max
15
20
1
Unit
V
Reverse working voltage
Reverse breakdown voltage
Reverse leakage current
Peak pulse current
IT =1mA
16
17.2
V
IR
VRWM =15V
μA
A
IPP
tP =8/20μs
55
25
28
IPP=25A, tP=8/20μs
IPP=50A, tP=8/20μs
22
26
27
V
V
Clamping voltage
VC
CJ
IPP=55A, tP=8/20μs
30
V
Junction capacitance
VRWM=0V, f=1MHz
330
400
pF
RATINGS AND V‐I CHARACTERISTICS CURVES (TA=25ºC, unless otherwise noted)
FIG.1:V- I curve characteristics
(Uni-directional)
FIG.2: Pulse waveform (8/20μs)
Percent of IPPM
front time: T1 = 1.25×T = 8×(1±20%)μs
time to half value: T2 = 20×(1±20%)μs
Peak value
I
100
90
IF
Half value
V
VC
VBR
VRWM
50
IR
VF
T2
IT
10
0
t(μs)
IPP
T
0
10
20
30
40
T1
TEL:+86-513-83639777
- 2 / 6-
http://www.jjwdz.com