MSE1PB, MSE1PD, MSE1PG, MSE1PJ
www.vishay.com
Vishay General Semiconductor
Surface Mount ESD Capability Rectifier
FEATURES
• Very low profile - typical height of 0.65 mm
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop, low leakage
current
Available
eSMP® Series
• ESD capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
Top View
Bottom View
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MicroSMP
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: MicroSMP
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
1.0 A
VRRM
IFSM
100 V, 200 V, 400 V, 600 V
Base P/N-M3
-
halogen-free, RoHS-compliant, and
20 A
0.925 V
1 μA
commercial grade
Base P/NHM3
automotive grade
VF at IF = 1.0 A
IR
- halogen-free, RoHS-compliant, and
TJ max.
175 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
Package
Diode variations
MicroSMP
Single die
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
TYPICAL APPLICATIONS
General purpose, polarity protection, and rail-to-rail
protection in both consumer and automotive applications.
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
MSE1PB
SB
MSE1PD
SD
MSE1PG
SG
MSE1PJ
SJ
UNIT
Device marking code
Max. repetitive peak reverse voltage
Max. average forward rectified current (fig. 1)
VRRM
IF(AV)
100
200
400
600
V
A
1.0
20
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.940
1.016
0.834
0.925
-
MAX.
UNIT
IF = 0.5 A
-
1.1
-
TA = 25 °C
IF = 1.0 A
IF = 0.5 A
IF = 1.0 A
(1)
Max. instantaneous forward voltage
VF
V
TA = 125 °C
0.98
1.0
50
-
TA = 25 °C
(2)
Max. reverse current
Rated VR
IR
μA
TA = 125 °C
3.7
Typical reverse recovery time
Typical junction capacitance
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
4.0 V, 1 MHz
trr
780
5
ns
CJ
-
pF
Notes
(1)
(2)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
Revision: 14-Aug-13
Document Number: 89067
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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