JCT812TA
JieJie Microelectronics CO. , Ltd.
FIG.1 Maximum power dissipation versus
FIG.2: RMS on-state current versus case
RMS on-state current
temperature
IT(RMS)(A)
P(W)
20
14
89℃
18
16
14
12
10
8
12
10
8
6
6
4
4
2
2
0
0
0
25
50
75
100
125
0
2
4
6
8
10
12
14
TC(℃)
IT(RMS)(A)
FIG.3: Surge peak on-state current versus
number of cycles
FIG.4: On-state characteristics
ITSM(A)
160
ITM(A)
100
Tj=25℃ typ
Tj=25℃ max
Tj=125℃ typ
Tc=25℃,tp=10ms,one cycle,half-sine
140
120
100
80
60
40
20
0
10
1
0
0.5
1
1.5
VTM(V)
2
2.5
3
1.E+0
1.E+1
1.E+2
1.E+3
1.E+4
1.E+5
FIG.5: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp<10ms, and corresponding value of I2t
(dI/dt<100A/μs)
FIG.6: Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
ITSM(A), I2t(A2s)
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
2.5
IGT
1000
ITSM
IL&IH
2
dI/dt
I2t
100
1.5
1
10
1
0.5
0
0.01
0.1
1
10
-40
-20
0
20
40
60
80
100
120
140
tp(ms)
Tj(℃)
TEL:+86-513-68528666
http://www.jjwdz.com
4