Datasheet > JANSM2N7380

JANSM2N7380

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	134K
描述
Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN

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JANSM2N7380 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

RADIATION HARDENED N-CHANNEL MOSFET

Reference MIL-PRF-19500/614

DEVICES

LEVELS

2N7380

JANSM (3K RAD(Si))

JANSD (10K RAD(Si))

JANSR (100K RAD(Si))

JANSF (300K RAD(Si))

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Drain – Source Voltage

Symbol

V_DS

Value

100

Unit

Vdc

Gate – Source Voltage

V_GS

± 20

Continuous Drain Current

I_D1

I_D2

14.4

Adc

T_C= +25°C

Continuous Drain Current

9.1

T_C= +100°C

Max. Power Dissipation

P_tl

75 ⁽¹⁾

Drain to Source On State Resistance

Operating & Storage Temperature

R_ds(on)

T_op, T_stg

0.180 ⁽²⁾

-55 to +150

°C

TO-257AA

JANSR2N7380, JANSF2N7380

See Figure 1

Note: (1) Derated Linearly by 0.6 W/°C for T_C> +25°C

(2) V_GS= 12Vdc, I_D= 9.1A

PRE-IRRADIATION ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise

noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Drain-Source Breakdown Voltage

V_GS= 0V, I_D= 1mAdc

V_(BR)DSS

100

Vdc

Gate-Source Voltage (Threshold)

V_GS(th)1

V_GS(th)2

V_GS(th)3

2.0

1.0

4.0

5.0

_DS≥ V_GS, I_D= 1.0mA

V_DS≥ V_GS, I_D= 1.0mA, T_j= +125°C

_DS≥ V_GS, I_D= 1.0mA, T_j= -55°C

Vdc

Gate Current

_GS= ±20V, V_DS= 0V

V_GS= ±20V, V_DS= 0V, T_j= +125°C

I_GSS1

I_GSS2

±100

±200

nAdc

Drain Current

V_GS= 0V, V_DS= 80V

V_GS= 0V, V_DS= 80V, T_j= +125°C

I_DSS1

I_DSS2

0.25

µAdc

mAdc

Static Drain-Source On-State Resistance

V_GS= 12V, I_D= 9.1A pulsed

r_DS(on)1

r_DS(on)2

0.180

0.20

_GS= 12V, I_D= 14.4A pulsed

T_j= +125°C

_GS= 12V, I_D= 9.1A pulsed

r_DS(on)3

V_SD

0.35

1.8

Diode Forward Voltage

_GS= 0V, I_D= 14.4A pulsed

Vdc

T4-LDS-0123 Rev. 2 (101017)

Page 1 of 4

12 3 4

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与JANSM2N7380相关器件

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JANSMQSMCGLCE10ATR	MICROSEMI	获取价格	1500 WATT LOW CAPACITANCE SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
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