Datasheet > JAN1N759DUR-1

JAN1N759DUR-1

更新时间： 2024-11-19 21:09:43

品牌	Logo	应用领域
CDI-DIODE		测试二极管
页数	文件大小	规格书
21页	75K
描述
Zener Diode, 12V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-213AA, DO-213AA

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JAN1N759DUR-1 技术参数

生命周期：	Obsolete	包装说明：	DO-213AA
Reach Compliance Code：	unknown	风险等级：	5.7
其他特性：	METALLURGICALLY BONDED	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	JEDEC-95代码：	DO-213AA
JESD-30 代码：	O-LELF-R2	湿度敏感等级：	NOT SPECIFIED
元件数量：	1	端子数量：	2
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	0.5 W
认证状态：	Not Qualified	标称参考电压：	12 V
表面贴装：	YES	技术：	ZENER
端子形式：	WRAP AROUND	端子位置：	END
处于峰值回流温度下的最长时间：	NOT SPECIFIED	最大电压容差：	1%
工作测试电流：	20 mA	Base Number Matches：	1

JAN1N759DUR-1 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 3 August 2004.

INCH-POUND

MIL-PRF-19500/127P

3 May 2004

SUPERSEDING

MIL-PRF-19500/127N

09 July 1999

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,

TYPES 1N4370A-1 THROUGH 1N4372A-1, AND 1N746A-1 THROUGH 1N759A-1, 1N4370AUR-1 THROUGH

1N4372AUR-1 AND 1N746AUR-1 THROUGH 1N759AUR-1, 1N4370C-1 THROUGH 1N4372C-1, AND 1N746C-1

THROUGH 1N759C-1, 1N4370CUR-1 THROUGH 1N4372CUR-1 AND 1N746CUR-1 THROUGH 1N759CUR-1,

1N4370D-1, THROUGH 1N4372D-1, AND 1N746D-1 THROUGH 1N759D-1, 1N4370DUR-1 THROUGH

1N4372DUR-1 AND 1N746DUR-1 THROUGH 1N759DUR-1,

JAN, JANTX, JANTXV, JANHC, AND JANKC

JANS level (see 6.4).

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall

consist of this specification sheet and MIL-PRF-19500.

1. SCOPE

* 1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator

diodes with voltage tolerances of 5, 2, and 1 percent. Three levels of product assurance are provided for each

encapsulated device type as specified in MIL-PRF-19500. Two level of product assurance is provided for each

unencapsulated device .

1.2 Physical dimensions. See 3.4 and figure 1 (similar to DO-35) and figure 2 (similar to DO-213AA), and figures

3 and 4 for die.

* 1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.9) herein and

as follows:

P_T= 500 mW, (DO-35) at T_L= +50 C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at

L = .375 inch (9.53 mm). Derate I_Zto 0.0 mA dc at +175 C.

P_T= 500 mW, (DO-213AA) at T_EC= +125 C, derate to 0 at +175 C. -65 C T_{J ≤}+175 C; -65 C T_{STG ≤}

≤

+175 C.

* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,

ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to Semiconductor@dscc.dla.mil. Since

contact information can change, you may want to verify the currency of this address information using the ASSIST

Online database at http://www.dodssp.daps.mil.

AMSC N/A

FSC 5961

12 3 4 5 6 7...21

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与JAN1N759DUR-1相关器件

型号	品牌	获取价格	描述	数据表
JAN1N759DURTR	MICROSEMI	获取价格	SILICON 400 mW ZENER DIODES
JAN1N759DURTR-1	MICROSEMI	获取价格	SILICON 400 mW ZENER DIODES
JAN1N759TR	MICROSEMI	获取价格	SILICON 400 mW ZENER DIODES
JAN1N759TR-1	MICROSEMI	获取价格	SILICON 400 mW ZENER DIODES
JAN1N759UR	MICROSEMI	获取价格	SILICON 400 mW ZENER DIODES
JAN1N759UR-1	MICROSEMI	获取价格	SILICON 400 mW ZENER DIODES
JAN1N759URTR	MICROSEMI	获取价格	SILICON 400 mW ZENER DIODES
JAN1N759URTR-1	MICROSEMI	获取价格	SILICON 400 mW ZENER DIODES
JAN1N821	MICROSEMI	获取价格	6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
JAN1N821	MOTOROLA	获取价格	6.2V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA

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