JAN1N5661

更新时间： 2024-01-18 09:46:08

品牌	Logo	应用领域
美高森美 - MICROSEMI		瞬态抑制器二极管局域网
页数	文件大小	规格书
4页	198K
描述
1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR

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JAN1N5661 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	DO-13
包装说明：	O-MALF-W2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.7
最大击穿电压：	158 V	最小击穿电压：	143 V
外壳连接：	CATHODE	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-202AA	JESD-30 代码：	O-MALF-W2
JESD-609代码：	e0	最大非重复峰值反向功率耗散：	1500 W
元件数量：	1	端子数量：	2
封装主体材料：	METAL	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	1 W
认证状态：	Not Qualified	参考标准：	MIL-19500
最大重复峰值反向电压：	128 V	表面贴装：	NO
技术：	AVALANCHE	端子面层：	TIN LEAD
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

JAN1N5661 数据手册

1N5629 thru 1N5665A

1500 WATT UNIDIRECTIONAL

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This popular Transient Voltage Suppressor (TVS) series for 1N5629 thru

1N5665A are JEDEC registered selections for unidirectional devices. All

have the same high Peak Pulse Power rating of 1500 W with extremely fast

response times. They are also available in military qualified selections as

described in the Features section herein. They are most often used for

protecting against transients from inductive switching environments,

induced RF effects, or induced secondary lightning effects as found in

lower surge levels of IEC61000-4-5. They are also very successful in

protecting airborne avionics and electrical systems. Since their response

time is virtually instantaneous, they can also protect from ESD and EFT per

IEC61000-4-2 and IEC61000-4-4.

DO-13

(DO-202AA)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Unidirectional TVS series for thru-hole mounting

• Protection from switching transients and induced RF

• ESD & EFT protection per IEC 61000-4-2 and -4-4

Suppresses transients up to 1500 watts @ 10/1000 µs

(see Figure 1)

• Secondary lightning protection per IEC61000-4-5 with

•

Clamps transient in less than 100 pico seconds

Working voltage (V_WM) range 5 V to 171 V

Hermetic sealed DO-13 metal package

JAN/TX/TXV military qualifications also available for

the tighter tolerance “A” suffix devices per MIL-PRF-

19500/500 by adding the JAN, JANTX, or JANTXV

prefix, e.g. JANTXV1N5629A, etc.

For bidirectional TVS in the same DO-13 package,

see separate data sheet for the 1N6036 – 1N6072A

series (also military qualified)

Surface mount equivalent packages also available as

SMCJ5.0 - SMCJ170CA or SMCG5.0 – SMCG170CA

in separate data sheet (consult factory for other

surface mount options)

42 Ohms source impedance:

Class 1: 1N5629 to 1N5665A

Class 2: 1N5629 to 1N5663A

Class 3: 1N5629 to 1N5655A

Class 4: 1N5629 to 1N5648A

• Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance:

•

Class 1 : 1N5629 to 1N5658A

Class 2: 1N5629 to 1N5651A

Class 3: 1N5629 to 1N5643A

Class 4: 1N5629 to 1N5636A

• Secondary lightning protection per IEC61000-4-5 with

2 Ohms source impedance:

Class 2: 1N5629 to 1N5642A

•

Plastic axial-leaded equivalents available in the

Class 3: 1N5629 to 1N5635A

1N6267 – 1N6303A series in separate data sheet

• Inherently radiation hard per Microsemi MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• 1500 Watts for 10/1000 µs with repetition rate of 0.01% or

•

CASE: DO-13 (DO-202AA), welded, hermetically

less* at lead temperature (T_L) 25^oC (See Figs. 1, 2, & 4)

sealed metal and glass

• Operating & Storage Temperatures: -65^oto +175^oC

FINISH: All external metal surfaces are Tin-Lead

plated and solderable per MIL-STD-750 method

2026

• THERMAL RESISTANCE: 50^oC/W junction to lead at

0.375 inches (10 mm) from body or 110 ^oC/W junction to

ambient when mounted on FR4 PC board with 4 mm²

copper pads (1 oz) and track width 1 mm, length 25 mm

•

POLARITY: Cathode connected to case and polarity

indicated by diode symbol

• DC Power Dissipation*: 1 Watt at T_L< +125^oC 3/8” (10

•

MARKING: Part number and polarity diode symbol

WEIGHT: 1.4 grams. (Approx)

mm) from body (see derating in Fig 3 and note below)

• Forward surge current: 200 Amps for 8.3ms half-sine

TAPE & REEL option: Standard per EIA-296 (add

wave at T_A= +25^oC

“TR” suffix to part number)

• Solder Temperatures: 260 ^oC for 10 s (maximum)

•

See package dimension on last page

* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage

(V_WM) except for transients that briefly drive the device into avalanche breakdown (V_BRto V_Cregion).

Microsemi

Page 1

11-06-2003 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与JAN1N5661相关器件

型号	品牌	描述	获取价格	数据表
JAN1N5661A	MICROSEMI	1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR	获取价格
JAN1N5661A	VISHAY	Trans Voltage Suppressor Diode, 1500W, 128V V(RWM), Unidirectional, 1 Element, Silicon, HE	获取价格
JAN1N5662	MICROSEMI	1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR	获取价格
JAN1N5662A	MICROSEMI	1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR	获取价格
JAN1N5662A	VISHAY	Trans Voltage Suppressor Diode, 1500W, 136V V(RWM), Unidirectional, 1 Element, Silicon, HE	获取价格
JAN1N5662ATR	MICROSEMI	Trans Voltage Suppressor Diode, 1500W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO	获取价格

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