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JAN1N5642A

更新时间： 2024-01-20 23:29:04
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器二极管
页数 文件大小 规格书
4页 198K
描述
1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR

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JAN1N5642A 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Active零件包装代码：DO-13
包装说明：O-MALF-W2针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.43
Is Samacsys：N最大击穿电压：25.2 V
最小击穿电压：22.8 V外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-202AA
JESD-30 代码：O-MALF-W2JESD-609代码：e0
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2封装主体材料：METAL
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：1 W认证状态：Qualified
参考标准：MIL-19500最大重复峰值反向电压：20.5 V
表面贴装：NO技术：AVALANCHE
端子面层：Tin/Lead (Sn/Pb)端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

JAN1N5642A 数据手册

 浏览型号JAN1N5642A的Datasheet PDF文件第1页浏览型号JAN1N5642A的Datasheet PDF文件第2页浏览型号JAN1N5642A的Datasheet PDF文件第4页 
1N5629 thru 1N5665A  
1500 WATT UNIDIRECTIONAL  
TRANSIENT VOLTAGE SUPPRESSOR  
S C O T T S D A L E D I V I S I O N  
Breakdown  
Breakdown  
Current  
I(BR)  
Rated  
Maximum  
Standby  
Current  
Maximum  
Clamping  
Voltage  
Maximum  
Peak  
Maximum  
Temperature  
Voltage  
Standoff  
Voltage  
VWM  
JEDEC  
Type  
No.*  
Pulse  
Current  
IPP  
V
(BR) @ I(BR)  
Coefficient of V(BR)  
ID @ VWM  
VC @ IPP  
α
V(BR)  
Min.  
V
Max.  
V
mA  
1
V
V
A
%/oC  
.108  
.108  
.108  
.108  
.108  
.108  
.108  
.108  
.108  
.108  
µA  
5
1N5661  
1N5661A  
1N5662  
1N5662A  
1N5663  
1N5663A  
1N5664  
1N5664A  
1N5665  
1N5665A  
135  
143  
144  
152  
153  
162  
162  
171  
180  
190  
165  
158  
176  
168  
187  
179  
198  
189  
220  
210  
121  
128  
130  
136  
138  
145  
146  
154  
162  
171  
215  
207  
230  
219  
244  
234  
258  
246  
287  
274  
7.0  
7.2  
6.5  
6.8  
6.2  
6.4  
5.8  
6.1  
5.2  
5.5  
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
* No suffix = 10% tolerance, suffix A = 5% tolerance. Suffix A also available in military qualified types with a JAN, JANTX, or JANTXV prefix.  
NOTES:  
V
is measured after I  
has been applied for < 300ms.  
(BR)  
(BR)  
Forward voltage VF at 100 amps peak 8.3 ms is 3.5 volts max.  
SYMBOLS & DEFINITIONS  
Symbol  
VWM  
Definition  
Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition. (See Note 1.)  
V(BR)  
Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25oC  
Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when subjected to the  
peak pulse current in a one millisecond time interval. The peak pulse voltage is the combination of voltage rise  
VC  
due to both the series resistance and thermal rise and positive temperature coefficient (α  
Peak Pulse Current: The peak current during the impulse (See Figure 2)  
)
V(BR)  
IPP  
PPP  
ID  
Peak Pulse Power: The pulse power as determined by the product of VC and IPP  
Standby Current: The current at the standoff voltage (VWM  
)
I(BR)  
Breakdown Current: The current used for measuring Breakdown Voltage (V(BR))  
NOTE 1: A TVS is normally selected according to the rated “Standoff Voltage” VWM that should be equal to or greater than the dc or  
continuous peak operating voltage level.  
GRAPHS  
100  
Exponential wave-form  
(See FIG. 2)  
10  
Pulse time duration (tp) is  
defined as that point where  
Peak Value  
IPP  
Square-wave pulse  
I
P decays to 50% of peak  
value (IPP).  
1.0  
0.1Kw  
100ns  
1µs  
10µs  
100µs  
1ms  
10ms  
time (t) in milliseconds  
Pulse Time (tp)  
FIG. 2 Pulse wave form for exponential surge  
FIG. 1 – Non-repetive peak pulse power rating curve  
NOTE: Peak power defined as peak voltage times peak current  
Copyright 2002  
11-06-2003 REV A  
Microsemi  
Page 3  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

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